发明授权
- 专利标题： Polishing slurry and polishing method
- 专利标题（中）： 抛光浆和抛光方法
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申请号： US11808047申请日： 2007-06-06
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公开(公告)号： US08696929B2公开(公告)日： 2014-04-15
- 发明人: Yasushi Kurata , Katsuyuki Masuda , Hiroshi Ono , Yasuo Kamigata , Kazuhiro Enomoto
- 申请人： Yasushi Kurata , Katsuyuki Masuda , Hiroshi Ono , Yasuo Kamigata , Kazuhiro Enomoto
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Chemical Co., Ltd.
- 当前专利权人： Hitachi Chemical Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JPP2002-128644 20020430; JPP2002-160159 20020531
- 主分类号： C09K13/04
- IPC分类号： C09K13/04 ; C09K3/14
摘要：
A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
公开/授权文献
- US20080003924A1 Polishing slurry and polishing method 公开/授权日：2008-01-03
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