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公开(公告)号：US20080003924A1
公开(公告)日：2008-01-03
申请号：US11808047
申请日：2007-06-06
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/3212
摘要： A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from one or more acids (A-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more compounds selected from one or more acids (B-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
摘要翻译： 包括氧化剂，金属氧化物溶解器，金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的化合物（A-group），所述酸选自： 其中第一离解酸基团的解离常数Ka（pKa）的对数的负值小于3.7，并且排除了乳酸，邻苯二甲酸，富马酸，马来酸和氨基乙酸的五种酸，铵盐 的A基团和A基团的酯，以及一种或多种选自一种或多种酸（B族）的化合物，所述酸选自其中解离常数Ka（pKa）的对数的负值为 第一离解酸基团为3.7以上，B族的5种酸，铵盐和B族的酯。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架，咪唑骨架，胍等任意一种的化合物的一种或多种的一种或多种 骨架，噻唑骨架和吡唑骨架。 具有高金属抛光速率，降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。
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公开(公告)号：US20070295934A1
公开(公告)日：2007-12-27
申请号：US11808038
申请日：2007-06-06
IPC分类号： C09K13/00
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/3212
摘要： A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from one or more acids (A-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more compounds selected from one or more acids (B-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
摘要翻译： 包括氧化剂，金属氧化物溶解器，金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的化合物（A-group），所述酸选自： 其中第一离解酸基团的解离常数Ka（pKa）的对数的负值小于3.7，并且排除了乳酸，邻苯二甲酸，富马酸，马来酸和氨基乙酸的五种酸，铵盐 的A基团和A基团的酯，以及一种或多种选自一种或多种酸（B族）的化合物，所述酸选自其中解离常数Ka（pKa）的对数的负值为 第一离解酸基团为3.7以上，B族的5种酸，铵盐和B族的酯。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架，咪唑骨架，胍等任意一种的化合物的一种或多种的一种或多种 骨架，噻唑骨架和吡唑骨架。 具有高金属抛光速率，降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。
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公开(公告)号：US20050181609A1
公开(公告)日：2005-08-18
申请号：US10513002
申请日：2003-04-28
IPC分类号： B24B37/00 , C09G1/02 , C09G1/04 , H01L21/321 , H01L21/302 , H01L21/461
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/3212
摘要： A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more types selected from one or more acids (A-group) selected from acids of which the dissociation constant (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more types selected from one or more acids (B-group) selected from acids of which the dissociation constant (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
摘要翻译： 包括氧化剂，金属氧化物溶解器，金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的一种（A-group）酸： 其中第一离解酸基团的解离常数（pKa）小于3.7，排除了乳酸，邻苯二甲酸，富马酸，马来酸和氨基乙酸的五种酸，A组的铵盐和 A组和选自一种或多种选自第一可解离酸基团的解离常数（pKa）为3.7以上的酸的酸（B组）和5种酸的一种或多种，以及五种酸的铵盐 B族的B族和酯类。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架，咪唑骨架，胍等任意一种的化合物的一种或多种的一种或多种 骨架，噻唑骨架和吡唑骨架。 具有高金属抛光速率，降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。
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公开(公告)号：US08696929B2
公开(公告)日：2014-04-15
申请号：US11808047
申请日：2007-06-06
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/3212
摘要： A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
摘要翻译： 包括氧化剂，金属氧化物溶解器，金属抑制剂和水，并且具有2至5的pH的抛光浆料。具有高金属抛光速率，降低蚀刻速率和抛光摩擦的抛光浆料导致生产， 半导体器件的高生产率降低了金属布线中的凹陷和侵蚀。
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公开(公告)号：US07367870B2
公开(公告)日：2008-05-06
申请号：US10513002
申请日：2003-04-28
IPC分类号： C09K13/00
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/3212
摘要： A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from one or more acids (A-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more compounds selected from one or more acids (B-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
摘要翻译： 包括氧化剂，金属氧化物溶解器，金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的化合物（A-group），所述酸选自： 其中第一离解酸基团的解离常数Ka（pKa）的对数的负值小于3.7，并且排除了乳酸，邻苯二甲酸，富马酸，马来酸和氨基乙酸的五种酸，铵盐 的A基团和A基团的酯，以及一种或多种选自一种或多种酸（B族）的化合物，所述酸选自其中解离常数Ka（pKa）的对数的负值为 第一离解酸基团为3.7以上，B族的5种酸，铵盐和B族的酯。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架，咪唑骨架，胍等任意一种的化合物的一种或多种的一种或多种 骨架，噻唑骨架和吡唑骨架。 具有高金属抛光速率，降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。
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6.发明授权Polishing slurry for polishing aluminum film and polishing method for polishing aluminum film using the same 有权用于抛光铝膜的抛光浆料和使用其抛光铝膜的抛光方法公开(公告)号：US07887609B2
公开(公告)日：2011-02-15
申请号：US11602503
申请日：2006-11-21
申请人： Hiroshi Ono , Toranosuke Ashizawa , Yasuo Kamigata
发明人： Hiroshi Ono , Toranosuke Ashizawa , Yasuo Kamigata
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C23F3/03
摘要： A polishing slurry for polishing an aluminum film used for LSI or the like and a method for polishing an aluminum film using the same are provided. A polishing slurry for polishing an aluminum film comprising a polyvalent carboxylic acid having a first stage acid dissociation exponent at 25° C. of 3 or lower, colloidal silica, and water, and having a pH from 2 to 4, and a polishing method for polishing an aluminum film using the polishing slurry.
摘要翻译： 提供了用于研磨用于LSI等的铝膜的抛光浆料和使用其的抛光铝膜的方法。 一种用于抛光铝膜的抛光浆料，其包含在25℃下具有3或更低，胶体二氧化硅和水的第一阶段酸解离指数的多价羧酸和pH为2至4的抛光方法， 使用抛光浆抛光铝膜。
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公开(公告)号：US20080105651A1
公开(公告)日：2008-05-08
申请号：US11572321
申请日：2005-08-09
CPC分类号： H01L21/3212 , C09G1/02
摘要： A polishing liquid for CMP has a composition loaded with, for example, an inorganic salt, a protective film forming agent and a surfactant capable of imparting a dissolution accelerating activity to enlarge a difference between polishing speed under non-load and polishing speed under load. By virtue of this polishing liquid for CMP, there can be simultaneously accomplished a speed increase for increasing CMP productivity, and wiring planarization for miniaturization and multilayer formation of wiring.
摘要翻译： 用于CMP的抛光液具有负载有例如无机盐，保护膜形成剂和能够赋予溶解促进活性的表面活性剂的组合物，以增加负载下的抛光速度和负载下的抛光速度之间的差异。 由于该CMP用抛光液，可以同时实现提高CMP生产率的速度增加，以及用于小型化和布线的多层形成的布线平面化。
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公开(公告)号：US20070196975A1
公开(公告)日：2007-08-23
申请号：US11578181
申请日：2005-04-12
申请人： Yutaka Nomura , Hiroki Terazaki , Hiroshi Ono , Yasuo Kamigata
发明人： Yutaka Nomura , Hiroki Terazaki , Hiroshi Ono , Yasuo Kamigata
IPC分类号： H01L21/8238
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention provides a metal-polishing liquid, comprising polishing particles and a chemical component, wherein the polishing particles have charges of surface potential of the same polarity as the charges of surface potential on the reaction layer, adsorption layer or the mixed layer thereof formed by the chemical component on a metal to be polished with the metal-polishing liquid, and a polishing method using the same, that enable to give highly flattened surface at high Cu-polishing speed and enable reduction of the number of the polishing particles remaining on the polished face after polishing.
摘要翻译： 本发明提供了一种金属抛光液，其包括抛光颗粒和化学成分，其中抛光颗粒具有与反应层，吸附层或其混合层上的表面电位的电荷相同极性的电荷电荷 通过金属抛光液体抛光的金属上的化学成分和使用该金属抛光液的抛光方法，能够在高Cu抛光速度下赋予高度平坦的表面，并且能够减少残留在其上的抛光颗粒的数量 抛光后的抛光面。
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公开(公告)号：US20110027994A1
公开(公告)日：2011-02-03
申请号：US12900926
申请日：2010-10-08
IPC分类号： H01L21/306
CPC分类号： H01L21/3212 , C09G1/02
摘要： A polishing liquid for CMP has a composition loaded with, for example, an inorganic salt, a protective film forming agent and a surfactant capable of imparting a dissolution accelerating activity to enlarge a difference between polishing speed under non-load and polishing speed under load. By virtue of this polishing liquid for CMP, there can be simultaneously accomplished a speed increase for increasing CMP productivity, and wiring planarization for miniaturization and multilayer formation of wiring.
摘要翻译： 用于CMP的抛光液具有负载有例如无机盐，保护膜形成剂和能够赋予溶解促进活性的表面活性剂的组合物，以增加负载下的抛光速度和负载下的抛光速度之间的差异。 由于该CMP用抛光液，可以同时实现提高CMP生产率的速度增加，以及用于小型化和布线的多层形成的布线平面化。
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10.发明申请Polishing slurry for polishing aluminum film and polishing method for polishing aluminum film using the same 有权用于抛光铝膜的抛光浆料和使用其抛光铝膜的抛光方法公开(公告)号：US20070141957A1
公开(公告)日：2007-06-21
申请号：US11602503
申请日：2006-11-21
申请人： Hiroshi Ono , Toranosuke Ashizawa , Yasuo Kamigata
发明人： Hiroshi Ono , Toranosuke Ashizawa , Yasuo Kamigata
IPC分类号： B24B7/30
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C23F3/03
摘要： A polishing slurry for polishing an aluminum film used for LSI or the like and a method for polishing an aluminum film using the same are provided. A polishing slurry for polishing an aluminum film comprising a polyvalent carboxylic acid having a first stage acid dissociation exponent at 25° C. of 3 or lower, colloidal silica, and water, and having a pH from 2 to 4, and a polishing method for polishing an aluminum film using the polishing slurry.
摘要翻译： 提供了用于研磨用于LSI等的铝膜的抛光浆料和使用其的抛光铝膜的方法。 一种用于抛光铝膜的抛光浆料，其包含在25℃下具有3或更低，胶体二氧化硅和水的第一阶段酸解离指数的多价羧酸和pH为2至4的抛光方法， 使用抛光浆抛光铝膜。
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