Invention Grant
US08697455B2 Monitoring test element groups (TEGs) for etching process and methods of manufacturing a semiconductor device using the same
有权
监测用于蚀刻工艺的测试元件组（TEG）和使用其制造半导体器件的方法
- Patent Title: Monitoring test element groups (TEGs) for etching process and methods of manufacturing a semiconductor device using the same
- Patent Title (中): 监测用于蚀刻工艺的测试元件组（TEG）和使用其制造半导体器件的方法
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Application No.: US13415270Application Date: 2012-03-08
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Publication No.: US08697455B2Publication Date: 2014-04-15
- Inventor: Kyoung-Woo Lee , Hong-Jae Shin , Woo-Jin Jang
- Applicant: Kyoung-Woo Lee , Hong-Jae Shin , Woo-Jin Jang
- Applicant Address: KR Suwon-Si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2011-0021009 20110309
- Main IPC: H01L21/66
- IPC: H01L21/66
Abstract:
Disclosed is a monitoring TEG for an etching process in a semiconductor device. The TEG includes an etch stopping layer on a substrate and a target layer to be etched provided on the etch stopping layer. The target layer to be etched includes a first opening portion formed by etching a portion of the target layer to be etched and a second opening portion formed by etching another portion of the target layer to be etched. The second opening portion has a smaller depth than the first opening portion. A depth of a partial contact hole formed by a first partial etching process may be measured.
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