发明授权
- 专利标题： Embedded JFETs for high voltage applications
- 专利标题（中）： 用于高压应用的嵌入式JFET
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申请号： US13481462申请日： 2012-05-25
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公开(公告)号： US08704279B2公开(公告)日： 2014-04-22
- 发明人: Jen-Hao Yeh , Chih-Chang Cheng , Ru-Yi Su , Ker Hsiao Huo , Po-Chih Chen , Fu-Chih Yang , Chun Lin Tsai
- 申请人： Jen-Hao Yeh , Chih-Chang Cheng , Ru-Yi Su , Ker Hsiao Huo , Po-Chih Chen , Fu-Chih Yang , Chun Lin Tsai
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
A device includes a buried well region and a first HVW region of the first conductivity, and an insulation region over the first HVW region. A drain region of the first conductivity type is disposed on a first side of the insulation region and in a top surface region of the first HVW region. A first well region and a second well region of a second conductivity type opposite the first conductivity type are on the second side of the insulation region. A second HVW region of the first conductivity type is disposed between the first and the second well regions, wherein the second HVW region is connected to the buried well region. A source region of the first conductivity type is in a top surface region of the second HVW region, wherein the source region, the drain region, and the buried well region form a JFET.
公开/授权文献
- US20130313617A1 Embedded JFETs for High Voltage Applications 公开/授权日：2013-11-28
信息查询
IPC分类:
