发明授权
- 专利标题: Smooth silicon-containing films
- 专利标题(中): 光滑的含硅膜
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申请号: US12970853申请日: 2010-12-16
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公开(公告)号: US08709551B2公开(公告)日: 2014-04-29
- 发明人: Keith Fox , Dong Niu , Joe Womack , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk , Jennifer O'Loughlin
- 申请人: Keith Fox , Dong Niu , Joe Womack , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk , Jennifer O'Loughlin
- 申请人地址: US CA Fremont
- 专利权人: Novellus Systems, Inc.
- 当前专利权人: Novellus Systems, Inc.
- 当前专利权人地址: US CA Fremont
- 代理机构: Weaver Austin Villeneuve & Sampson LLP
- 主分类号: C23C16/509
- IPC分类号: C23C16/509 ; C23C16/505 ; C23C16/455 ; C23C16/34 ; C23C16/40 ; C23C16/24 ; H01L21/02 ; H01L21/8229
摘要:
Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 Å as measured on a silicon substrate.
公开/授权文献
- US20110236600A1 Smooth Silicon-Containing Films 公开/授权日:2011-09-29