公开(公告)号：US20130316518A1

公开(公告)日：2013-11-28

申请号：US13478999

申请日：2012-05-23

申请人： Alice HOLLISTER ,  Sirish REDDY ,  Keith FOX ,  Mandyam SRIRAM ,  Joe WOMACK

发明人： Alice HOLLISTER ,  Sirish REDDY ,  Keith FOX ,  Mandyam SRIRAM ,  Joe WOMACK

IPC分类号： H01L21/20

CPC分类号： H01L21/0245 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11556 ,  H01L27/11582

摘要： Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 Å, such as less than about 5 Å as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.

公开(公告)号：US08563414B1

公开(公告)日：2013-10-22

申请号：US12766721

申请日：2010-04-23

申请人： Keith Fox ,  Dennis Hausmann

发明人： Keith Fox ,  Dennis Hausmann

IPC分类号： C23C8/54 ,  C23C14/28

CPC分类号： C23C16/26 ,  C23C16/505

摘要： Conductive carbon films having a resistivity of less than about 0.2 Ohm-cm, preferably less than about 0.05 Ohm-cm, are deposited by PECVD. Conductive carbon films are essentially free of sp3-hybridized carbon and contain predominantly sp2 carbon, based on IR spectral features. Carbon content of the films is at least about 75% atomic C. Conductive carbon films may contain hydrogen, but are typically hydrogen-poor, containing less than about 20% H. In some embodiments, conductive carbon films further contain nitrogen (N). For example, conductive films having a CxHyNz composition, where nitrogen is present at between about 5-10% atomic, have both high conductivity and low roughness, because introduction of nitrogen delays formation of crystallites in the film. The films are deposited at a process temperature of at least about 620° C., and at a pressure of less than about 20 Torr in a dual-frequency plasma process dominated by low frequency (LF) plasma.

摘要翻译： 通过PECVD沉积电阻率小于约0.2欧姆 - 厘米，优选小于约0.05欧姆 - 厘米的导电碳膜。 基于IR光谱特征，导电碳膜基本上不含sp3杂化碳并主要含有sp2碳。 膜的碳含量为至少约75％原子C.导电碳膜可能含有氢，但通常为氢贫，含量小于约20％H.在一些实施方案中，导电碳膜还含有氮（N）。 例如，由于氮的引入会延缓薄膜中的微晶形成，所以具有C 5 H 10 Nz组成的导电膜，其中氮存在于约5-10％原子之间，具有高导电性和低粗糙度。 在由低频（LF）等离子体主导的双频等离子体工艺中，膜的至少约620℃的处理温度和小于约20托的压力下沉积。

公开(公告)号：US07622400B1

公开(公告)日：2009-11-24

申请号：US10849568

申请日：2004-05-18

申请人： Keith Fox ,  Easwar Srinivasan ,  David Mordo ,  Qingguo Wu

发明人： Keith Fox ,  Easwar Srinivasan ,  David Mordo ,  Qingguo Wu

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76801 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76826

摘要： Methods of forming a dielectric layer having a low dielectric constant and high mechanical strength are provided. The methods involve depositing a sub-layer of the dielectric material on a substrate, followed by treating the sub-layer with a plasma. The process of depositing and plasma treating the sub-layers is repeated until a desired thickness has been reached.

摘要翻译： 提供了形成具有低介电常数和高机械强度的介电层的方法。 所述方法包括将电介质材料的子层沉积在衬底上，随后用等离子体处理子层。 重复沉积和等离子体处理子层的过程，直到达到所需的厚度。

公开(公告)号：US20190208941A1

公开(公告)日：2019-07-11

申请号：US15865048

申请日：2018-01-08

申请人： Laura Fox ,  Keith Fox

发明人： Laura Fox ,  Keith Fox

IPC分类号： A47G25/20

CPC分类号： A47G25/20

摘要： An apparatus for hanging a garment comprising a vertical suspension member hangable from a body, a garment support member suspended from the suspension member, the garment support member extending laterally from opposed sides of the suspension member; and an arcuate hood support member extending between first and second ends and having a midpoint therebetween, wherein the first and second ends of the hood support member are secured to the garment support member and wherein the midpoint of the hood support member is cantilevered upward from the garment support member. A method for hanging a garment comprising providing an apparatus for hanging a garment, positioning a shoulder portion of the garment on the garment support member with the suspension member extending above the shoulder portion, positioning a hood on the hood support member and hanging the apparatus on a support.

公开(公告)号：US09117668B2

公开(公告)日：2015-08-25

申请号：US13478999

申请日：2012-05-23

申请人： Alice Hollister ,  Sirish Reddy ,  Keith Fox ,  Mandyam Sriram ,  Joe Womack

发明人： Alice Hollister ,  Sirish Reddy ,  Keith Fox ,  Mandyam Sriram ,  Joe Womack

IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L27/115

CPC分类号： H01L21/0245 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11556 ,  H01L27/11582

摘要： Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 Å, such as less than about 5 Å as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD），使用包含含硅前体（例如硅烷），氩气和第二气体如氦气的工艺气体沉积具有低压缩应力和平滑拉伸硅膜的平滑硅膜， 氢或氦和氢的组合。 通过向工艺气体中加入掺杂剂源或含锗前体源可以获得掺杂的平滑硅膜和平滑硅锗膜。 在一些实施例中，在沉积期间使用包括高频（HF）和低频（LF）分量的双频等离子体等离子体，导致改善的膜粗糙度。 膜的特征在于通过原子力显微镜（AFM）测量的小于约等于小于约5埃的粗糙度（Ra）和绝对值小于约500MPa的压缩应力。 在一些实施方案中，获得平滑的拉伸硅膜。

公开(公告)号：US08709551B2

公开(公告)日：2014-04-29

申请号：US12970853

申请日：2010-12-16

申请人： Keith Fox ,  Dong Niu ,  Joe Womack ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk ,  Jennifer O'Loughlin

发明人： Keith Fox ,  Dong Niu ,  Joe Womack ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk ,  Jennifer O'Loughlin

IPC分类号： C23C16/509 ,  C23C16/505 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/24 ,  H01L21/02 ,  H01L21/8229

CPC分类号： C23C16/505 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02104 ,  H01L21/02123 ,  H01L21/02129 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02263 ,  H01L21/02274 ,  H01L21/0245 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/8229

摘要： Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 Å as measured on a silicon substrate.

摘要翻译： 描述了用于沉积超光滑含硅膜和膜堆的方法和硬件。 在一个实例中，公开了在等离子体增强化学气相沉积设备中在衬底上形成含硅膜的方法的实施例，该方法包括向等离子体增强化学气相沉积设备供应含硅反应物; 向等离子体增强化学气相沉积设备供应共反应物; 向等离子体增强化学气相沉积设备的处理站提供电容耦合等离子体，所述等离子体包括由含硅反应物产生的硅自由基和由共反应物产生的共反应物基团; 以及将所述含硅膜沉积在所述基底上，所述含硅膜的折射率在1.4和2.1之间，所述含硅膜还具有在硅衬底上测得的绝对粗糙度小于或等于4.5的值 。

公开(公告)号：US08591659B1

公开(公告)日：2013-11-26

申请号：US12355601

申请日：2009-01-16

申请人： Zhiyuan Fang ,  Pramod Subramonium ,  Jon Henri ,  Keith Fox

发明人： Zhiyuan Fang ,  Pramod Subramonium ,  Jon Henri ,  Keith Fox

IPC分类号： B08B9/08

CPC分类号： B08B7/0035 ,  B08B9/00 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： Improved methods and apparatuses for removing residue from the interior surfaces of the deposition reactor are provided. The methods involve increasing availability of cleaning reagent radicals inside the deposition chamber by generating cleaning reagent radicals in a remote plasma generator and then further delivering in-situ plasma energy while the cleaning reagent mixture is introduced into the deposition chamber. Certain embodiments involve a multi-stage process including a stage in which the cleaning reagent mixture is introduced at a high pressure (e.g., about 0.6 Torr or more) and a stage the cleaning reagent mixture is introduced at a low pressure (e.g., about 0.6 Torr or less).

摘要翻译： 提供了用于从沉积反应器的内表面除去残留物的改进的方法和装置。 这些方法涉及通过在远程等离子体发生器中产生清洁试剂自由基，然后在将清洁试剂混合物引入沉积室的同时进一步输送原位等离子体能量来增加沉积室内清洗剂自由基的可用性。 某些实施方案涉及多级方法，其包括其中以高压（例如，约0.6托或更高）引入清洗剂混合物的阶段，以及在低压（例如约0.6）下引入清洗试剂混合物的阶段 乇以下）。

公开(公告)号：US08173537B1

公开(公告)日：2012-05-08

申请号：US11693617

申请日：2007-03-29

申请人： Kaushik Chattopadhyay ,  Keith Fox ,  Tom Mountsier ,  Hui-Jung Wu ,  Bart van Schravendijk ,  Kimberly Branshaw

发明人： Kaushik Chattopadhyay ,  Keith Fox ,  Tom Mountsier ,  Hui-Jung Wu ,  Bart van Schravendijk ,  Kimberly Branshaw

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L23/53295 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： Stability of an underlying dielectric diffusion barrier during deposition and ultraviolet (UV) processing of an overlying dielectric layer is critical for successful integration. UV-resistant diffusion barrier layers are formed by depositing the layer in a hydrogen-starved environment. Diffusion barrier layers can be made more resistant to UV radiation by thermal, plasma, or UV treatment during or after deposition. Lowering the modulus of the diffusion barrier layer can also improve the resistance to UV radiation.

摘要翻译： 沉积期间的底层电介质扩散屏障和上覆介质层的紫外（UV）处理的稳定性对成功整合至关重要。 通过在氢饥饿环境中沉积该层而形成耐UV扩散阻挡层。 扩散阻挡层可以通过在沉积期间或之后的热，等离子体或UV处理更耐紫外线辐射。 降低扩散阻挡层的模量也可以提高耐UV辐射。

公开(公告)号：US08741394B2

公开(公告)日：2014-06-03

申请号：US12970846

申请日：2010-12-16

申请人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

发明人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

IPC分类号： H05H1/24

CPC分类号： C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

摘要： Methods for depositing film stacks by plasma enhanced chemical vapor deposition are described. In one example, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is provided. The method includes, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

摘要翻译： 描述了通过等离子体增强化学气相沉积沉积膜堆叠的方法。 在一个实例中，提供了一种用于在基底上沉积薄膜叠层的方法，其中薄膜叠层包括不同组成的薄膜，并且沉淀是在原位进行的。 该方法包括在第一等离子体活化膜沉积阶段中，在衬底上沉积具有第一膜组成的第一层膜; 在第二等离子体激活沉积阶段中，在第一层膜上沉积具有第二膜组成的第二层膜; 以及在将等离子体的组成从第一等离子体激活膜沉积阶段转移到第二等离子体激活膜沉积阶段期间维持等离子体。

公开(公告)号：US20130171834A1

公开(公告)日：2013-07-04

申请号：US13671424

申请日：2012-11-07

申请人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Spiram ,  George Andrew Antonelli ,  Bart van Schravendijk

发明人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Spiram ,  George Andrew Antonelli ,  Bart van Schravendijk

IPC分类号： H01L21/02

CPC分类号： H01L21/0234 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274

摘要： Disclosed herein are methods of forming a film stack which may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Also disclosed herein are process station apparatuses for forming a film stack of silicon nitride and silicon oxide films which may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.

摘要翻译： 本文公开了形成膜堆叠的方法，其可以包括由含氮前体与含硅前体的反应形成的氮化硅膜的等离子体加速沉积，等离子体加速从处理室中显着消除含硅前体，等离子体 在由含硅前体与氧化剂的反应形成的氮化硅膜的顶部加速沉积氧化硅膜，并且等离子体加速了处理室中的氧化剂的显着消除。 本文还公开了用于形成氮化硅和氧化硅膜的膜堆叠的处理站装置，其可以包括处理室，一个或多个气体输送管线，一个或多个RF发生器，以及具有指令的机器可读介质的系统控制器 用于操作一个或多个气体输送管线和一个或多个RF发生器。