发明授权
- 专利标题： Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
- 专利标题（中）： 半导体元件和半导体器件的制造方法以及沉积设备
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申请号： US12938538申请日： 2010-11-03
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公开(公告)号： US08709864B2公开(公告)日： 2014-04-29
- 发明人: Shunpei Yamazaki , Junichiro Sakata , Toru Takayama
- 申请人： Shunpei Yamazaki , Junichiro Sakata , Toru Takayama
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2009-255217 20091106
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
An object is to provide a deposition apparatus for forming a thin film which contains few impurities such as a hydrogen atom or a carbon atom. Further, an object is to provide a method for forming a thin film containing few impurities. Furthermore, an object is to provide a method for manufacturing a highly reliable semiconductor element including an oxide semiconductor film containing few impurities. A deposition apparatus can be provided for forming a thin film which contains few impurities such as a compound containing a hydrogen atom such as H2O, a compound containing a carbon atom, a hydrogen atom, or a carbon atom can be provided. Further, a method for forming a thin film containing few impurities can be provided. Furthermore, a method for forming a highly reliable semiconductor element including an oxide semiconductor film containing few impurities can be provided.
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