公开(公告)号：US08709864B2

公开(公告)日：2014-04-29

申请号：US12938538

申请日：2010-11-03

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Toru Takayama

IPC分类号： H01L21/00

CPC分类号： H01L21/6719 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/67207 ,  H01L29/66969 ,  H01L29/7869

摘要： An object is to provide a deposition apparatus for forming a thin film which contains few impurities such as a hydrogen atom or a carbon atom. Further, an object is to provide a method for forming a thin film containing few impurities. Furthermore, an object is to provide a method for manufacturing a highly reliable semiconductor element including an oxide semiconductor film containing few impurities. A deposition apparatus can be provided for forming a thin film which contains few impurities such as a compound containing a hydrogen atom such as H2O, a compound containing a carbon atom, a hydrogen atom, or a carbon atom can be provided. Further, a method for forming a thin film containing few impurities can be provided. Furthermore, a method for forming a highly reliable semiconductor element including an oxide semiconductor film containing few impurities can be provided.

摘要翻译： 本发明的目的是提供一种用于形成含有少量诸如氢原子或碳原子的杂质的薄膜的沉积装置。 此外，目的在于提供一种形成含有少量杂质的薄膜的方法。 此外，目的在于提供一种制造高可靠性的半导体元件的方法，所述半导体元件包括少量杂质的氧化物半导体膜。 可以提供沉积装置，用于形成含有少量杂质的薄膜，例如含有氢原子的化合物如H 2 O，含有碳原子的化合物，氢原子或碳原子。 此外，可以提供形成含有少量杂质的薄膜的方法。 此外，可以提供形成包含少量杂质的氧化物半导体膜的高可靠性半导体元件的方法。

公开(公告)号：US08866143B2

公开(公告)日：2014-10-21

申请号：US13411842

申请日：2012-03-05

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

IPC分类号： H01L33/08 ,  H01L29/423 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1345 ,  H01L29/49 ,  G02F1/1362 ,  H01L29/66 ,  H01L29/786

CPC分类号： G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78684

摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

摘要翻译： 本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅极电极和栅极布线，其中为了实现该目的，本发明的结构是在同一基板上具有像素TFT 设置在显示区域和设置在显示区域周围的驱动电路TFT，其中像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过与形成的栅极布线的连接器电接触 并且连接器设置在像素TFT和驱动电路TFT的沟道形成区域的外侧。

公开(公告)号：US08415679B2

公开(公告)日：2013-04-09

申请号：US13461249

申请日：2012-05-01

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L27/14

CPC分类号： H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

公开(公告)号：US08415208B2

公开(公告)日：2013-04-09

申请号：US10193912

申请日：2002-07-15

申请人： Toru Takayama ,  Junya Maruyama ,  Mayumi Mizukami ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Junya Maruyama ,  Mayumi Mizukami ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L21/76 ,  H01L21/30

CPC分类号： H01L27/1266 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1362 ,  G02F2001/13613 ,  H01L21/2007 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869 ,  H01L33/44 ,  H01L2227/326 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

公开(公告)号：US08367440B2

公开(公告)日：2013-02-05

申请号：US12432906

申请日：2009-04-30

申请人： Toru Takayama ,  Junya Maruyama ,  Mayumi Mizukami ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Junya Maruyama ,  Mayumi Mizukami ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1266 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1362 ,  G02F2001/13613 ,  H01L21/2007 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869 ,  H01L33/44 ,  H01L2227/326 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

公开(公告)号：US08357611B2

公开(公告)日：2013-01-22

申请号：US13042751

申请日：2011-03-08

申请人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  C23C14/165 ,  C23C14/3414 ,  H01L21/2855 ,  H01L23/552 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

摘要翻译： 实现了具有良好的TFT特性的半导体器件。 通过使用高纯度靶作为靶，使用单一气体氩（Ar）作为溅射气体，将基板温度设定为300℃以下，将溅射气体压力设定为1.0Pa〜3.0 Pa时，膜的膜应力为-1×1010dyn / cm 2〜1×1010dyn / cm 2。 通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.3ppm，优选等于或小于0.1ppm，并且具有低电阻率（等于或小于40μ＆OHgr· cm），作为栅极布线材料和TFT的其它布线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

公开(公告)号：US08338198B2

公开(公告)日：2012-12-25

申请号：US12477966

申请日：2009-06-04

申请人： Toru Takayama ,  Junya Maruyama ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Junya Maruyama ,  Shunpei Yamazaki

IPC分类号： H01L21/50

CPC分类号： H01L27/1266 ,  B32B7/06 ,  B32B43/006 ,  B32B2310/0843 ,  B32B2457/08 ,  B32B2457/14 ,  G02F1/1368 ,  G02F2001/13613 ,  H01L21/3221 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/78663 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/529 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  Y10S438/977 ,  Y10T156/1137 ,  Y10T156/1939

摘要： There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.

摘要翻译： 提供了能够防止对被剥离层的损伤的剥离方法。 因此，不仅可以以高产率在整个表面上剥离具有小面积的被剥离层，而且可以在整个表面上剥离具有大面积的待剥离层。 在剥离之前进行用于部分降低第一材料层（11）和第二材料层（12）之间的接触性能（激光照射，压力施加等）的处理，然后通过物理手段进行剥离。 因此，能够容易地在第二材料层（12）的内部或其界面进行分离。

公开(公告)号：US08228454B2

公开(公告)日：2012-07-24

申请号：US12720761

申请日：2010-03-10

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC分类号： G02F1/1343

CPC分类号： H01L27/1218 ,  H01L21/02175 ,  H01L21/28008 ,  H01L21/324 ,  H01L21/425 ,  H01L21/707 ,  H01L21/823487 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L29/78603 ,  H01L33/005 ,  H01L33/0054 ,  H01L51/003 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2933/0016

摘要： The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

摘要翻译： 本发明提供了一种剥离方法的简化方法以及均匀地剥离和转录到大尺寸基板。 本发明的一个特征是剥离第一粘合剂并在剥离过程中同时固化第二粘合剂，从而简化制造过程。 另外，本发明是为了将形成半导体的电极的剥离层转印为规定的基板的时机。 特别地，特征在于，在大尺寸基板上形成有多个半导体元件的状态下进行剥离的情况下，通过使用压差来进行剥离。

公开(公告)号：US08212364B2

公开(公告)日：2012-07-03

申请号：US11440116

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno ,  Koichiro Tanaka

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/02667 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2223/54473 ,  H01L2224/1134 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2224/92247 ,  H01L2225/06524 ,  H01L2225/06555 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/3512

摘要： The present invention is directed to a semiconductor device having: an interposer; a wiring provided on the interposer; a first chip having a first semiconductor device, a first pad and a first solder ball over the interposer, the first semiconductor device being connected to the first pad and the first pad being connected to the first solder ball; a second chip having a second semiconductor device, a second pad and a second solder ball over the first chip, the second semiconductor device being connected to the second pad and the second pad being connected to the second solder ball; and a terminal provided at a rear side of the interposer, where the wiring and the first chip are connected via the first solder ball, where the first chip and the second chip are connected via the second solder ball, and where the terminal is connected to the first semiconductor device.

摘要翻译： 本发明涉及一种具有：插入件的半导体器件; 布置在插入器上的布线; 第一芯片，具有第一半导体器件，第一焊盘和位于插入件上的第一焊球，第一半导体器件连接到第一焊盘，第一焊盘连接到第一焊球; 具有第二半导体器件的第二芯片，第二焊盘和位于第一芯片上的第二焊球，第二半导体器件连接到第二焊盘，第二焊盘连接到第二焊球; 以及设置在所述插入件的后侧的端子，其中所述布线和所述第一芯片经由所述第一焊球连接，其中所述第一芯片和所述第二芯片经由所述第二焊球连接，并且所述端子连接到 第一个半导体器件。

公开(公告)号：US08174029B2

公开(公告)日：2012-05-08

申请号：US13082104

申请日：2011-04-07

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L27/3244 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L29/16 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/5008 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/566

摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

摘要翻译： 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层 与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物 形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层 由氮化硅或氮化铝形成。