公开(公告)号：US08709864B2

公开(公告)日：2014-04-29

申请号：US12938538

申请日：2010-11-03

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Toru Takayama

IPC分类号： H01L21/00

CPC分类号： H01L21/6719 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/67207 ,  H01L29/66969 ,  H01L29/7869

摘要： An object is to provide a deposition apparatus for forming a thin film which contains few impurities such as a hydrogen atom or a carbon atom. Further, an object is to provide a method for forming a thin film containing few impurities. Furthermore, an object is to provide a method for manufacturing a highly reliable semiconductor element including an oxide semiconductor film containing few impurities. A deposition apparatus can be provided for forming a thin film which contains few impurities such as a compound containing a hydrogen atom such as H2O, a compound containing a carbon atom, a hydrogen atom, or a carbon atom can be provided. Further, a method for forming a thin film containing few impurities can be provided. Furthermore, a method for forming a highly reliable semiconductor element including an oxide semiconductor film containing few impurities can be provided.

摘要翻译： 本发明的目的是提供一种用于形成含有少量诸如氢原子或碳原子的杂质的薄膜的沉积装置。 此外，目的在于提供一种形成含有少量杂质的薄膜的方法。 此外，目的在于提供一种制造高可靠性的半导体元件的方法，所述半导体元件包括少量杂质的氧化物半导体膜。 可以提供沉积装置，用于形成含有少量杂质的薄膜，例如含有氢原子的化合物如H 2 O，含有碳原子的化合物，氢原子或碳原子。 此外，可以提供形成含有少量杂质的薄膜的方法。 此外，可以提供形成包含少量杂质的氧化物半导体膜的高可靠性半导体元件的方法。

公开(公告)号：US09136389B2

公开(公告)日：2015-09-15

申请号：US12581200

申请日：2009-10-19

申请人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Shunichi Ito ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Shunichi Ito ,  Junichiro Sakata

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/45 ,  H01L27/12

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/78618

摘要： An object is to control composition and a defect of an oxide semiconductor. Another object is to increase field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with off current suppressed. The oxide semiconductor is represented by InMO3(ZnO)n (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and n is a non-integer number of greater than or equal to 1 and less than 50) and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al). In addition, the oxide semiconductor has an amorphous structure. Here, n is preferably a non-integer number of greater than or equal to 50, more preferably less than 10.

摘要翻译： 目的是控制氧化物半导体的组成和缺陷。 另一个目的是增加薄膜晶体管的场效应迁移率，并获得足够的开关比，同时抑制截止电流。 氧化物半导体由InMO 3（ZnO）n（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素表示，n是大于或等于1的非整数） 小于50），还含有氢。 在这种情况下，使Zn的浓度低于In和M的浓度（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素）。 此外，氧化物半导体具有非晶结构。 这里，n优选为大于或等于50，更优选小于10的非整数。

公开(公告)号：US08946700B2

公开(公告)日：2015-02-03

申请号：US13552805

申请日：2012-07-19

申请人： Kengo Akimoto ,  Junichiro Sakata ,  Shunpei Yamazaki

发明人： Kengo Akimoto ,  Junichiro Sakata ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L29/78618 ,  H01L27/1225 ,  H01L29/7869

摘要： An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.

摘要翻译： 本发明的目的是提供一种用于制造具有稳定电特性并使用氧化物半导体形成的薄膜晶体管的高可靠性半导体器件的方法。 一种制造半导体器件的方法包括以下步骤：在绝缘表面上，在栅极上形成氧化物半导体膜，其中栅极绝缘膜置于氧化物半导体膜和栅电极之间; 在所述氧化物半导体膜上形成包括钛，钼和钨中的至少一种的第一导电膜; 在所述第一导电膜上形成包含具有比氢更低的电负性的金属的第二导电膜; 通过蚀刻第一导电膜和第二导电膜形成源电极和漏电极; 以及在所述氧化物半导体膜，所述源电极和所述漏极上形成与所述氧化物半导体膜接触的绝缘膜。

公开(公告)号：US08841163B2

公开(公告)日：2014-09-23

申请号：US13399369

申请日：2012-02-17

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC分类号： H01L21/00 ,  H01L29/10 ,  H01L21/324 ,  H01L21/28 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/465 ,  H01L21/02565 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/477 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

摘要翻译： 一种用于大功率应用的半导体器件，其中提供了具有高质量生产率的新型半导体材料。 形成氧化物半导体膜，然后对暴露的氧化物半导体膜进行第一热处理，以便减少氧化物半导体膜中的杂质如水分或氢。 接下来，为了进一步减少氧化物半导体膜中的杂质，例如水分或氢气，通过离子注入法，离子掺杂法等将氧添加到氧化物半导体膜中，之后，第二热处理为 在暴露的氧化物半导体膜上进行。

公开(公告)号：US08748223B2

公开(公告)日：2014-06-10

申请号：US12888846

申请日：2010-09-23

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

IPC分类号： H01L21/00 ,  H01L21/16

CPC分类号： H01L29/66742 ,  C23C14/086 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

摘要： An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.

摘要翻译： 目的是提供具有稳定电特性的氧化物半导体和包括氧化物半导体的半导体器件。 通过溅射法制造半导体膜的方法包括将基板保持在保持在减压状态的处理室中的步骤; 在低于400℃下加热基材。 在去除处理室中的剩余水分的状态下引入除去氢气和水分的溅射气体; 以及使用设置在处理室中的金属氧化物作为目标，在基板上形成氧化物半导体膜。 当形成氧化物半导体膜时，除去反应气氛中的剩余水分; 因此，可以降低氧化物半导体膜中的氢浓度和氢化物浓度。 因此，可以使氧化物半导体膜稳定。

公开(公告)号：US08729550B2

公开(公告)日：2014-05-20

申请号：US12835906

申请日：2010-07-14

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara

IPC分类号： H01L29/10

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/7869

摘要： An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor.

摘要翻译： 目的是降低半导体器件的制造成本。 目的是提高半导体器件的开口率。 目的是使半导体器件的显示部分显示更高清晰度的图像。 目的在于提供一种可以高速运转的半导体装置。 该半导体器件包括一个基板上的驱动电路部分和显示部分。 驱动器电路部分包括：使用金属形成源电极和漏极的驱动电路TFT，并且使用氧化物半导体形成沟道层; 以及使用金属形成的驱动电路布线。 显示部分包括：使用氧化物导体形成源极和漏极的像素TFT，并且使用氧化物半导体形成半导体层; 以及使用氧化物导体形成的显示布线。

公开(公告)号：US08643030B2

公开(公告)日：2014-02-04

申请号：US13239716

申请日：2011-09-22

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kaoru Tsuchiya

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kaoru Tsuchiya

IPC分类号： H01L29/18

CPC分类号： H01L27/3246 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3281 ,  H01L27/3283 ,  H01L27/3288 ,  H01L51/52 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5253 ,  H01L51/5262 ,  H01L2251/5323

摘要： It is an object of the present invention is to provide a light-emitting device in which high luminance can be obtained with low power consumption by improving the extraction efficiency. A light-emitting device of the invention comprises an insulating film, a plurality of first electrodes being in contact with the insulating film and formed on the insulating film to be in parallel, an electroluminescent layer formed over the plurality of first electrodes, and a plurality of second electrodes intersecting with the plurality of first electrodes and formed over the electroluminescent layer in parallel, wherein the insulating film contains nitrogen and silicon and the first electrodes contain a conductive transparent oxide material and silicon oxide.

公开(公告)号：US08629441B2

公开(公告)日：2014-01-14

申请号：US12848389

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Miyuki Hosoba ,  Tatsuya Takahashi

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Miyuki Hosoba ,  Tatsuya Takahashi

IPC分类号： H01L29/10

CPC分类号： H01L27/3262 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/32 ,  H01L27/3248 ,  H01L29/45

摘要： The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material.

摘要翻译： 半导体器件包括驱动电路，该驱动电路包括第一薄膜晶体管和在一个衬底上包括第二薄膜晶体管的像素。 第一薄膜晶体管包括第一栅极电极层，栅极绝缘层，第一氧化物半导体层，第一氧化物导电层，第二氧化物导电层，与第一氧化物半导体的一部分接触的氧化物绝缘层 并且与第一和第二氧化物导电层的周边和侧表面接触，第一源极电极层和第一漏极电极层。 第二薄膜晶体管包括使用透光材料形成的第二栅极电极层，第二氧化物半导体层以及第二源电极层和第二漏极电极层。

公开(公告)号：US08609478B2

公开(公告)日：2013-12-17

申请号：US12826007

申请日：2010-06-29

申请人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

发明人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC分类号： H01L21/84

CPC分类号： H01L21/02664 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.

摘要翻译： 本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在制造半导体器件的方法中，该半导体器件包括薄膜晶体管，其中使用氧化物半导体层形成包括使用氧化物半导体层的沟道形成区域，源极区域和漏极区域的半导体层，用于减少杂质的热处理 例如水分（用于脱水或脱氢的热处理）以提高氧化物半导体层的纯度。

公开(公告)号：US08518761B2

公开(公告)日：2013-08-27

申请号：US13085518

申请日：2011-04-13

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Makoto Furuno

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Makoto Furuno

IPC分类号： H01L21/00

CPC分类号： H01L21/02266 ,  C23C14/0036 ,  C23C14/08 ,  C23C14/3407 ,  C23C14/3414 ,  H01L21/02112 ,  H01L21/8232 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1251 ,  H01L28/60 ,  H01L29/4908 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/7869

摘要： An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.