Invention Grant
- Patent Title: Semiconductor apparatus
- Patent Title (中): 半导体装置
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Application No.: US13166094Application Date: 2011-06-22
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Publication No.: US08713349B2Publication Date: 2014-04-29
- Inventor: Sang Jin Byeon , Jae Bum Ko
- Applicant: Sang Jin Byeon , Jae Bum Ko
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2010-0114408 20101117
- Main IPC: G11C5/06
- IPC: G11C5/06

Abstract:
A semiconductor apparatus may comprise: a first chip ID generation unit configured to receive an enable signal through a first through-silicon via and a clock signal through a second through-silicon via and generate a first chip ID signal and a delayed enable signal; a second chip ID generation unit configured to receive the delayed enable signal through a third through-silicon via from the first chip ID generation unit and the clock signal and generate a second chip ID signal; a first chip selection signal generation unit configured to receive the first chip ID signal and a main ID signal and generate a first chip selection signal; and a second chip selection signal generation unit configured to receive the second chip ID signal and the main ID signal and generate a second chip selection signal.
Public/Granted literature
- US20120124408A1 SEMICONDUCTOR APPARATUS Public/Granted day:2012-05-17
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