发明授权
- 专利标题： Magnetoresistive element and method of manufacturing the same
- 专利标题（中）： 磁阻元件及其制造方法
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申请号： US13428465申请日： 2012-03-23
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公开(公告)号： US08716818B2公开(公告)日： 2014-05-06
- 发明人: Masatoshi Yoshikawa , Satoshi Seto , Hideaki Harakawa , Jyunichi Ozeki , Tatsuya Kishi , Keiji Hosotani
- 申请人： Masatoshi Yoshikawa , Satoshi Seto , Hideaki Harakawa , Jyunichi Ozeki , Tatsuya Kishi , Keiji Hosotani
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-147464 20110701
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; G11C11/02
摘要：
According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.