公开(公告)号：US08716818B2

公开(公告)日：2014-05-06

申请号：US13428465

申请日：2012-03-23

申请人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

发明人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.

摘要翻译： 根据一个实施例，磁阻元件包括具有可变和垂直磁化的存储层，存储层上的隧道势垒层，在隧道势垒层上具有不变和垂直磁化的参考层，参考上的硬掩模层 层和在参考层和硬掩模层的侧壁上的侧壁间隔层。 参考层的面内尺寸小于存储层的面内尺寸。 存储层和参考层的面内尺寸之差为2nm以下。 侧壁间隔层包括选自金刚石，DLC，BN，SiC，B4C，Al2O3和AlN的材料。

公开(公告)号：US20130001652A1

公开(公告)日：2013-01-03

申请号：US13428465

申请日：2012-03-23

申请人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

发明人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.

摘要翻译： 根据一个实施例，磁阻元件包括具有可变和垂直磁化的存储层，存储层上的隧道势垒层，在隧道势垒层上具有不变和垂直磁化的参考层，参考上的硬掩模层 层和在参考层和硬掩模层的侧壁上的侧壁间隔层。 参考层的面内尺寸小于存储层的面内尺寸。 存储层和参考层的面内尺寸之差为2nm以下。 侧壁间隔层包括选自金刚石，DLC，BN，SiC，B4C，Al2O3和AlN的材料。

公开(公告)号：US09570671B2

公开(公告)日：2017-02-14

申请号：US14479192

申请日：2014-09-05

申请人： Masatoshi Yoshikawa ,  Hiroaki Yoda ,  Shuichi Tsubata ,  Kenji Noma ,  Tatsuya Kishi ,  Satoshi Seto ,  Kazuhiro Tomioka

发明人： Masatoshi Yoshikawa ,  Hiroaki Yoda ,  Shuichi Tsubata ,  Kenji Noma ,  Tatsuya Kishi ,  Satoshi Seto ,  Kazuhiro Tomioka

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.

摘要翻译： 根据一个实施例，磁存储器件包括堆叠结构，其包括磁性元件，覆盖层叠结构的保护绝缘膜以及设置在堆叠结构和保护绝缘膜之间的界面处的界面层。 界面层包含不包含在磁性元件或保护绝缘膜中的预定元件。

公开(公告)号：US09093632B2

公开(公告)日：2015-07-28

申请号：US14203422

申请日：2014-03-10

申请人： Shuichi Tsubata ,  Masatoshi Yoshikawa ,  Satoshi Seto ,  Kazuhiro Tomioka ,  Ga Young Ha

发明人： Shuichi Tsubata ,  Masatoshi Yoshikawa ,  Satoshi Seto ,  Kazuhiro Tomioka ,  Ga Young Ha

IPC分类号： H01L27/00 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L21/28

CPC分类号： H01L43/12 ,  H01L21/0234 ,  H01L21/28202 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L27/228 ,  H01L29/4236 ,  H01L29/518 ,  H01L29/78 ,  H01L43/02

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a magnetoresistive element formed on a semiconductor substrate, a first contact plug which extends through an interlayer dielectric film formed on the semiconductor substrate and immediately below the magnetoresistive element, has a bottom surface in contact with an upper surface of the semiconductor substrate, and is adjacent to the magnetoresistive element, and an insulating film formed between the magnetoresistive element and the first contact plug and on the interlayer dielectric film, wherein the insulating film includes a first region positioned on a side of the interlayer dielectric film, and a second region positioned in the insulating film and on an upper surface of the first region, the insulating film is made of SiN, and the first region is a nitrogen rich film compared to the second region.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括形成在半导体衬底上的磁阻元件，延伸穿过形成在半导体衬底上并紧靠磁阻元件下方的层间绝缘膜的第一接触插塞具有与 半导体衬底的上表面，并且与磁阻元件相邻，以及形成在磁阻元件和第一接触插塞之间以及层间电介质膜上的绝缘膜，其中绝缘膜包括位于 所述层间电介质膜和位于所述绝缘膜中并位于所述第一区域的上表面上的第二区域，所述绝缘膜由SiN制成，并且所述第一区域与所述第二区域相比是富氮膜。

公开(公告)号：US08956882B1

公开(公告)日：2015-02-17

申请号：US14200510

申请日：2014-03-07

申请人： Kazuhiro Tomioka ,  Satoshi Seto ,  Masatoshi Yoshikawa ,  Satoshi Inada

发明人： Kazuhiro Tomioka ,  Satoshi Seto ,  Masatoshi Yoshikawa ,  Satoshi Inada

IPC分类号： H01L21/00 ,  H01L43/12

CPC分类号： H01L43/12 ,  H01L27/228

摘要： According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first non-magnetic layer on a first magnetic layer, forming a second magnetic layer on the first non-magnetic layer, forming a second non-magnetic layer on the second magnetic layer, forming a third magnetic layer on the second non-magnetic layer, patterning the third magnetic layer by a RIE using an etching gas including a noble gas and a nitrogen gas until a surface of the second non-magnetic layer is exposed, and patterning the second non-magnetic layer and the second magnetic layer after patterning of the third magnetic layer.

摘要翻译： 根据一个实施例，一种制造磁阻元件的方法，该方法包括在第一磁性层上形成第一非磁性层，在第一非磁性层上形成第二磁性层，在第一非磁性层上形成第二非磁性层 第二磁性层，在第二非磁性层上形成第三磁性层，使用包括惰性气体和氮气的蚀刻气体，通过RIE对第三磁性层进行构图，直到第二非磁性层的表面露出 并且在第三磁性层的图案化之后图案化第二非磁性层和第二磁性层。

公开(公告)号：US09698338B2

公开(公告)日：2017-07-04

申请号：US14639675

申请日：2015-03-05

申请人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

发明人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

IPC分类号： H01L27/22 ,  H01L21/00 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/08 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12

摘要： According to one embodiment, a method of manufacturing a magnetic memory device includes a stack structure formed of a plurality of layers including a magnetic layer, the method includes forming a lower structure film including at least one layer, etching the lower structure film to form a lower structure of the stack structure, forming an upper structure film including at least one layer on a region including the lower structure, and etching the upper structure film to form an upper structure of the stack structure on the lower structure.

公开(公告)号：US09595663B2

公开(公告)日：2017-03-14

申请号：US14479180

申请日：2014-09-05

申请人： Masatoshi Yoshikawa ,  Yasuyuki Sonoda ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

发明人： Masatoshi Yoshikawa ,  Yasuyuki Sonoda ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

IPC分类号： H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory includes a transistor having first and second diffusion layers in a semiconductor substrate and a gate electrode between the first and second diffusion layers, a first insulating layer on the semiconductor substrate, the first insulating layer covering the transistor, a first contact plug in the first insulating layer, the first contact plug connected to the first diffusion layer, a second contact plug in the first insulating layer, the second contact plug connected to the second diffusion layer, a magnetoresistive element on the first insulating layer, the magnetoresistive element connected to the first contact plug, an electrode on the magnetoresistive element, and an impurity region in the first insulating layer, the second contact plug, and the electrode.

摘要翻译： 根据一个实施例，磁存储器包括在半导体衬底中具有第一和第二扩散层的晶体管和位于第一和第二扩散层之间的栅电极，半导体衬底上的第一绝缘层，覆盖晶体管的第一绝缘层， 第一绝缘层中的第一接触插塞，连接到第一扩散层的第一接触插塞，第一绝缘层中的第二接触插塞，连接到第二扩散层的第二接触插塞，第一绝缘层上的磁阻元件 连接到第一接触插塞的磁阻元件，磁阻元件上的电极以及第一绝缘层，第二接触插塞和电极中的杂质区域。

公开(公告)号：US09508922B2

公开(公告)日：2016-11-29

申请号：US14642506

申请日：2015-03-09

申请人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

发明人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

IPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/12

CPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory device includes a first stack structure including a first magnetic layer, and a first nonmagnetic layer provided on the first magnetic layer, a second stack structure including a second magnetic layer provided on the first nonmagnetic layer, a second nonmagnetic layer provided on the second magnetic layer, and a top conductive layer provided on the second nonmagnetic layer, and a sidewall conductive layer provided on a sidewall of the second stack structure.

摘要翻译： 根据一个实施例，磁存储器件包括第一堆叠结构，其包括第一磁性层和设置在第一磁性层上的第一非磁性层，第二堆叠结构，包括设置在第一非磁性层上的第二磁性层，第二层 设置在第二磁性层上的非磁性层和设置在第二非磁性层上的顶部导电层，以及设置在第二堆叠结构的侧壁上的侧壁导电层。

公开(公告)号：US09425388B2

公开(公告)日：2016-08-23

申请号：US14200429

申请日：2014-03-07

申请人： Kazuhiro Tomioka ,  Satoshi Seto ,  Masatoshi Yoshikawa

发明人： Kazuhiro Tomioka ,  Satoshi Seto ,  Masatoshi Yoshikawa

IPC分类号： H01L43/12 ,  H01L43/08 ,  H01L27/22

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic element includes a first magnetic layer, a first non-magnetic layer on the first magnetic layer, a second magnetic layer on the first non-magnetic layer, a second non-magnetic layer on the second magnetic layer, and a third magnetic layer on the second non-magnetic layer, the third magnetic layer having a side wall layer including a material which is included in the second non-magnetic layer; wherein the material is one of Ru and Pt as a common material to the side wall layer and the second non-magnetic layer.

摘要翻译： 磁性元件包括第一磁性层，第一磁性层上的第一非磁性层，第一非磁性层上的第二磁性层，第二磁性层上的第二非磁性层，第三磁性层 在所述第二非磁性层上，所述第三磁性层具有包括在所述第二非磁性层中的材料的侧壁层; 其中所述材料是作为侧壁层和第二非磁性层的共同材料的Ru和Pt中的一种。

公开(公告)号：US20060147093A1

公开(公告)日：2006-07-06

申请号：US10790787

申请日：2004-03-03

申请人： Takashi Sanse ,  Satoshi Seto

发明人： Takashi Sanse ,  Satoshi Seto

IPC分类号： G06K9/00

CPC分类号： B42D25/309 ,  B42D25/00 ,  B42D25/40 ,  G06K9/00281 ,  G07C9/00087 ,  G07C2209/41

摘要： A photo ID card, which is difficult to forge, is generated. A photo ID card having an IC chip is generated, and a face photo area therein is photographed for obtaining face photo data. The face photo data are converted into code information and stored in the chip together with personal information. For authentication, the face of a person being authenticated is photographed for obtaining photographed face data, and converted into code information. The personal information and the code information is read from the chip of the card held by the person, and whether or not the information obtained by the reading has been registered with a registration server is judged. Whether or not the code information generated from the photographed face data agrees with the code information in the server is also judged. If the results of both judgments are affirmative, the person is authenticated.

摘要翻译： 生成难以伪造的照片身份证。 产生具有IC芯片的照片ID卡，并且拍摄其中的面部照片区域以获得面部照片数据。 面部照片数据被转换成代码信息并与个人信息一起存储在芯片中。 对于认证，拍摄被认证的人的面部以获得拍摄的面部数据，并转换成代码信息。 从个人持有的卡的芯片读取个人信息和代码信息，并且判断通过读取获得的信息是否已经向注册服务器注册。 还判断从拍摄的面部数据生成的代码信息是否与服务器中的代码信息一致。 如果两个判断的结果都是肯定的，那么该人就被认证。