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    Magnetoresistive element and method of manufacturing the same
    1.
    发明授权
    Magnetoresistive element and method of manufacturing the same 有权
    磁阻元件及其制造方法

    公开(公告)号：US08716818B2

    公开(公告)日：2014-05-06

    申请号：US13428465

    申请日：2012-03-23

    申请人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

    发明人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

    IPC分类号： H01L29/82 ,  G11C11/02

    CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.

    摘要翻译： 根据一个实施例，磁阻元件包括具有可变和垂直磁化的存储层，存储层上的隧道势垒层，在隧道势垒层上具有不变和垂直磁化的参考层，参考上的硬掩模层 层和在参考层和硬掩模层的侧壁上的侧壁间隔层。 参考层的面内尺寸小于存储层的面内尺寸。 存储层和参考层的面内尺寸之差为2nm以下。 侧壁间隔层包括选自金刚石，DLC，BN，SiC，B4C，Al2O3和AlN的材料。

    MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
    磁性元件及其制造方法

    公开(公告)号：US20130001652A1

    公开(公告)日：2013-01-03

    申请号：US13428465

    申请日：2012-03-23

    申请人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

    发明人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.

    摘要翻译： 根据一个实施例，磁阻元件包括具有可变和垂直磁化的存储层，存储层上的隧道势垒层，在隧道势垒层上具有不变和垂直磁化的参考层，参考上的硬掩模层 层和在参考层和硬掩模层的侧壁上的侧壁间隔层。 参考层的面内尺寸小于存储层的面内尺寸。 存储层和参考层的面内尺寸之差为2nm以下。 侧壁间隔层包括选自金刚石，DLC，BN，SiC，B4C，Al2O3和AlN的材料。

    Magnetoresistive effect device and magnetic memory
    3.
    发明授权
    Magnetoresistive effect device and magnetic memory 有权
    磁阻效应器和磁记忆体

    公开(公告)号：US08223533B2

    公开(公告)日：2012-07-17

    申请号：US12556883

    申请日：2009-09-10

    申请人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

    发明人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

    IPC分类号： G11C11/00

    CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3277 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

    摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.

    摘要翻译： 磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜 在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

    MAGNETORESISTIVE DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
    7.
    发明申请
    MAGNETORESISTIVE DEVICE AND MAGNETIC RANDOM ACCESS MEMORY 有权
    磁性器件和磁性随机存取存储器

    公开(公告)号：US20100238717A1

    公开(公告)日：2010-09-23

    申请号：US12715699

    申请日：2010-03-02

    申请人： Masahiko NAKAYAMA ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

    发明人： Masahiko NAKAYAMA ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

    IPC分类号： G11C11/00 ,  G11B5/33

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/126 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/10

    摘要： A magnetoresistive device includes: a magnetic recording layer including a first magnetic layer having perpendicular magnetic anisotropy, and a second magnetic layer having in-plane magnetic anisotropy and being exchange-coupled to the first magnetic layer, Curie temperature of the second magnetic layer being lower than Curie temperature of the first magnetic layer, and the magnetic recording layer having a magnetization direction perpendicular to a film plane; a magnetic reference layer having a magnetization direction which is perpendicular to a film plane and is invariable; and a nonmagnetic layer provided between the magnetic recording layer and the magnetic reference layer. The magnetization direction of the magnetic recording layer is changeable by spin-polarized electrons caused by flowing current between the magnetic recording layer and the magnetic reference layer in a direction perpendicular to the film plane.

    摘要翻译： 磁阻器件包括：包括具有垂直磁各向异性的第一磁性层的磁记录层和具有面内磁各向异性并与第一磁性层交换耦合的第二磁性层，第二磁性层的居里温度较低 第一磁性层的居里温度，磁化方向垂直于膜面的磁记录层; 具有垂直于膜平面的磁化方向且不变的磁参考层; 以及设置在磁记录层和磁参考层之间的非磁性层。 磁记录层的磁化方向可以由磁记录层和磁参考层之间的流动电流在垂直于膜平面的方向上引起的自旋极化电子改变。

    Magnetoresistive device and magnetic random access memory
    8.
    发明授权
    Magnetoresistive device and magnetic random access memory 有权
    磁阻器件和磁性随机存取存储器

    公开(公告)号：US08169817B2

    公开(公告)日：2012-05-01

    申请号：US12715699

    申请日：2010-03-02

    申请人： Masahiko Nakayama ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

    发明人： Masahiko Nakayama ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/126 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/10

    摘要： A magnetoresistive device includes: a magnetic recording layer including a first magnetic layer having perpendicular magnetic anisotropy, and a second magnetic layer having in-plane magnetic anisotropy and being exchange-coupled to the first magnetic layer, Curie temperature of the second magnetic layer being lower than Curie temperature of the first magnetic layer, and the magnetic recording layer having a magnetization direction perpendicular to a film plane; a magnetic reference layer having a magnetization direction which is perpendicular to a film plane and is invariable; and a nonmagnetic layer provided between the magnetic recording layer and the magnetic reference layer. The magnetization direction of the magnetic recording layer is changeable by spin-polarized electrons caused by flowing current between the magnetic recording layer and the magnetic reference layer in a direction perpendicular to the film plane.

    摘要翻译： 磁阻器件包括：包括具有垂直磁各向异性的第一磁性层的磁记录层和具有面内磁各向异性并与第一磁性层交换耦合的第二磁性层，第二磁性层的居里温度较低 第一磁性层的居里温度，磁化方向垂直于膜面的磁记录层; 具有垂直于膜平面的磁化方向且不变的磁参考层; 以及设置在磁记录层和磁参考层之间的非磁性层。 磁记录层的磁化方向可以由磁记录层和磁参考层之间的流动电流在垂直于膜平面的方向上引起的自旋极化电子改变。