发明授权
- 专利标题： Integrated assist features for epitaxial growth
- 专利标题（中）： 用于外延生长的集成辅助功能
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申请号： US13182568申请日： 2011-07-14
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公开(公告)号： US08722519B2公开(公告)日： 2014-05-13
- 发明人: Omar Zia , Ruiqi Tian , Edward O. Travis
- 申请人： Omar Zia , Ruiqi Tian , Edward O. Travis
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Jackson Walker L.L.P.
- 主分类号： H01L27/07
- IPC分类号： H01L27/07
摘要：
A method for making a semiconductor device is provided which comprises (a) creating a data set (301) which defines a set of tiles for a polysilicon deposition process; (b) deriving a polysilicon deposition mask set (311) from the data set, wherein the polysilicon deposition mask set includes a plurality of polysilicon tiles (303); (c) deriving an epitaxial growth mask set (321) from the data set, wherein the epitaxial growth mask set includes a plurality of epitaxial tiles (305); and (d) using the polysilicon deposition mask set and the epitaxial growth mask set to make a semiconductor device (331); wherein the epitaxial growth mask set is derived from the data set by using at least a portion of the tile pattern defined in the data set for at least a portion of the tile pattern defined in the epitaxial deposition mask set.
公开/授权文献
- US20110269300A1 Integrated Assist Features for Epitaxial Growth 公开/授权日：2011-11-03
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