发明授权
- 专利标题： Semiconductor integrated circuit
- 专利标题（中）： 半导体集成电路
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申请号： US13592949申请日： 2012-08-23
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公开(公告)号： US08723291B2公开(公告)日： 2014-05-13
- 发明人: Toshiaki Yonezu , Takeshi Iwamoto , Shigeki Obayashi , Masashi Arakawa , Kazushi Kono
- 申请人： Toshiaki Yonezu , Takeshi Iwamoto , Shigeki Obayashi , Masashi Arakawa , Kazushi Kono
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2006-219370 20060811; JP2007-30263 20070209
- 主分类号： H01L23/62
- IPC分类号： H01L23/62
摘要：
A semiconductor integrated circuit which can perform reliable relief processing using an electric fuse. The semiconductor integrated circuit includes a fuse wiring, a first electrode pad, a second electrode pad, a pollution-control layer, and a first via hole wiring and a second via hole wiring. The fuse wiring is cut by current exceeding a predetermined value. A first electrode pad is connected to one side of a fuse wiring, a second electrode pad is connected to the other of a fuse wiring, a pollution-control layer is formed in the upper layer and the lower layer of the fuse wiring via an insulating layer. In the fuse wiring, second via hole wiring of a pair is formed in the outside of a first via hole wiring so that the first the via hole wiring is surrounded.
公开/授权文献
- US20130049166A1 SEMICONDUCTOR INTEGRATED CIRCUIT 公开/授权日：2013-02-28