Positive displacement pumping chamber

Invention Grant

US08728337B2 Positive displacement pumping chamber 有权

Title translation: 正排量泵室

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Patent Title: Positive displacement pumping chamber
Patent Title (中): 正排量泵室
Application No.: US13773711

Application Date: 2013-02-22
Publication No.: US08728337B2

Publication Date: 2014-05-20
Inventor: Carl Brancher , John MacNeil , Robert Trowell
Applicant: SPTS Technologies Limited
Applicant Address: GB Newport
Assignee: SPTS Technologies Limited
Current Assignee: SPTS Technologies Limited
Current Assignee Address: GB Newport
Agency: Volentine & Whitt, PLLC
Priority: GB0520694.1 20051012
Main IPC: H01L21/306
IPC: H01L21/306

Abstract:

A method is for processing a substrate. The method includes placing the substrate in a process volume and introducing a process gas or vapor into the process volume and/or subsequently removing gas or vapor from the volume. The step of introducing and/or removing the gas is at least partially performed by moving a movable wall to change the process volume in an appropriate sense.

Abstract(Chinese):

一种用于处理衬底的方法。该方法包括将基底放置在处理体积中并将工艺气体或蒸气引入到处理体积中和/或随后从体积中除去气体或蒸气。引入和/或去除气体的步骤至少部分地通过移动可移动壁来适当地改变处理体积来执行。

Public/Granted literature

US20130186857A1 POSITIVE DISPLACEMENT PUMPING CHAMBER Public/Granted day:2013-07-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）