发明授权
- 专利标题： Self-aligned ion implantation for IBC solar cells
- 专利标题（中）： IBC太阳能电池的自对准离子注入
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申请号： US13028562申请日： 2011-02-16
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公开(公告)号： US08735234B2公开(公告)日： 2014-05-27
- 发明人: Atul Gupta , Nicholas Bateman
- 申请人： Atul Gupta , Nicholas Bateman
- 申请人地址： US MA Gloucester
- 专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H01L21/338
- IPC分类号： H01L21/338 ; H01L21/8238 ; H01L21/8242
摘要：
An improved method of doping a substrate is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A paste having a dopant of a first conductivity is applied to the surface of the substrate. This paste serves as a mask for a subsequent ion implantation step, allowing ions of a dopant having an opposite conductivity to be introduced to the portions of the substrate which are exposed. After the ions are implanted, the mask can be removed and the dopants may be activated. Methods of using an aluminum-based and phosphorus-based paste are disclosed.
公开/授权文献
- US20110201188A1 SELF-ALIGNED ION IMPLANTATION FOR IBC SOLAR CELLS 公开/授权日：2011-08-18
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