发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13286280申请日： 2011-11-01
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公开(公告)号： US08735889B2公开(公告)日： 2014-05-27
- 发明人: Shunpei Yamazaki , Hideomi Suzawa , Yoshihiro Kusuyama , Koji Ono , Jun Koyama
- 申请人： Shunpei Yamazaki , Hideomi Suzawa , Yoshihiro Kusuyama , Koji Ono , Jun Koyama
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2001-056063 20010228; JP2001-302687 20010928
- 主分类号： H01L29/04
- IPC分类号： H01L29/04
摘要：
There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more.
公开/授权文献
- US20120043580A1 Semiconductor Device and Manufacturing Method Thereof 公开/授权日：2012-02-23
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