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US08742566B2 Semiconductor device having vertically offset bond on trace interconnects on recessed and raised bond fingers 有权
半导体器件在凹陷和凸起的接合指状物上的迹线互连上具有垂直偏移接合

Semiconductor device having vertically offset bond on trace interconnects on recessed and raised bond fingers
摘要：
A semiconductor device includes a substrate, a first recessed conductive layer embedded and recessed into a first surface of the substrate, and a first raised conductive layer disposed above the first surface. A first vertical offset exists between an upper surface of the first recessed conductive layer and an upper surface of the first raised conductive layer. The device includes a second recessed conductive layer embedded and recessed into a second surface of the substrate. The second surface of the substrate is opposite the first surface. The device includes a second raised conductive layer disposed beneath the second surface and an interconnect structure disposed on the first recessed and raised conductive layers and the second recessed and raised conductive layers. A second vertical offset exists between a lower surface of the second recessed conductive layer and a lower surface of the second recessed conductive layer.
摘要（中）：

半导体器件包括衬底，嵌入并凹入到衬底的第一表面中的第一凹陷导电层和设置在第一表面上方的第一凸起导电层。 在第一凹陷导电层的上表面和第一凸起导电层的上表面之间存在第一垂直偏移。 该器件包括嵌入并凹入到衬底的第二表面中的第二凹陷导电层。 基板的第二表面与第一表面相对。 该装置包括设置在第二表面下方的第二凸起导电层和设置在第一凹入和凸起导电层上的互连结构和第二凹入和凸起导电层。 在第二凹陷导电层的下表面和第二凹陷导电层的下表面之间存在第二垂直偏移。

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