Invention Grant
- Patent Title: Solder volume compensation with C4 process
- Patent Title (中): C4工艺焊锡体积补偿
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Application No.: US13552792Application Date: 2012-07-19
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Publication No.: US08742578B2Publication Date: 2014-06-03
- Inventor: Charles L. Arvin , Eric D. Perfecto , Wolfgang Sauter , Jennifer D. Schuler
- Applicant: Charles L. Arvin , Eric D. Perfecto , Wolfgang Sauter , Jennifer D. Schuler
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent David A. Cain
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
An integrated circuit (IC) chip including solder structures for connection to a package substrate, an IC chip package, and a method of forming the same are disclosed. In an embodiment, an IC chip is provided comprising a wafer having a plurality of solder structures disposed above the wafer. A ball limiting metallurgy (BLM) layer is disposed between each of the plurality of solder structures and the wafer. At least one of the plurality of solder structures has a first diameter and a first height, and at least one other solder structure has a second diameter and a second height. The differing heights and volumes of solder structures facilitate solder volume compensation for chip join improvement on the IC chip side rather than the package side.
Public/Granted literature
- US20140021607A1 SOLDER VOLUME COMPENSATION WITH C4 PROCESS Public/Granted day:2014-01-23
Information query
IPC分类: