发明授权
- 专利标题： Silicon and silicon germanium nanowire structures
- 专利标题（中）： 硅和硅锗纳米线结构
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申请号： US12958179申请日： 2010-12-01
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公开(公告)号： US08753942B2公开(公告)日： 2014-06-17
- 发明人: Kelin J. Kuhn , Seiyon Kim , Rafael Rios , Stephen M. Cea , Martin D. Giles , Annalisa Cappellani , Titash Rakshit , Peter Chang , Willy Rachmady
- 申请人： Kelin J. Kuhn , Seiyon Kim , Rafael Rios , Stephen M. Cea , Martin D. Giles , Annalisa Cappellani , Titash Rakshit , Peter Chang , Willy Rachmady
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L29/775
- IPC分类号： H01L29/775 ; H01L29/66 ; H01L21/336 ; H01L21/762 ; H01L29/772 ; B82Y40/00
摘要：
Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising source/drain structures adjacent to spacers, and nanowire channel structures disposed between the spacers, wherein the nanowire channel structures are vertically stacked above each other.
公开/授权文献
- US20120138886A1 SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES 公开/授权日：2012-06-07
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