Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
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Application No.: US13400097Application Date: 2012-02-19
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Publication No.: US08754438B2Publication Date: 2014-06-17
- Inventor: Ya-Wen Lin , Shih-Cheng Huang , Po-Min Tu , Chia-Hung Huang , Shun-Kuei Yang
- Applicant: Ya-Wen Lin , Shih-Cheng Huang , Po-Min Tu , Chia-Hung Huang , Shun-Kuei Yang
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronics Technology, Inc.
- Current Assignee: Advanced Optoelectronics Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201110181775 20110630
- Main IPC: H01L33/62
- IPC: H01L33/62
Abstract:
An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.
Public/Granted literature
- US20130001508A1 LIGHT EMITTING DIODE Public/Granted day:2013-01-03
Information query
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