Light emitting diode
    1.
    发明授权
    Light emitting diode 失效
    发光二极管

    公开(公告)号:US08754438B2

    公开(公告)日:2014-06-17

    申请号:US13400097

    申请日:2012-02-19

    IPC分类号: H01L33/62

    摘要: An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.

    摘要翻译: LED包括衬底,缓冲层,外延层和导电层。 外延层包括第一N型外延层,第二N型外延层和夹在第一和第二N型外延层之间的图案化沟槽的阻挡层。 第一和第二N型外延层经由图案化的沟槽彼此接触。 因此,LED具有均匀的电流分布和更大的发光面积。 还提供了一种用于LED的制造方法。

    Light emitting diode and manufacturing method thereof
    2.
    发明授权
    Light emitting diode and manufacturing method thereof 有权
    发光二极管及其制造方法

    公开(公告)号:US08604503B2

    公开(公告)日:2013-12-10

    申请号:US13600137

    申请日:2012-08-30

    IPC分类号: H01L33/22

    摘要: A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED.

    摘要翻译: 发光二极管包括衬底,衬底上的过渡层和过渡层上的外延层。 过渡层包括具有平坦顶表面的平坦区域和具有粗糙顶表面的图案区域。 AlN材料包括由多个球体组成的第一部分和由多个球团组成的第二部分。 球体在平坦区域和图案化区域处于过渡层的顶表面上。 s条位于图案区域中限定的凹槽中。 在s条和外延层的底表面之间形成气隙。 AlN材料的球体和块状物有助于将由外延层产生的光反射到LED的光输出表面。

    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 有权
    发光二极管及其制造方法

    公开(公告)号:US20130032779A1

    公开(公告)日:2013-02-07

    申请号:US13457431

    申请日:2012-04-26

    IPC分类号: H01L33/06 H01L33/32 H01L33/46

    摘要: A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed.

    摘要翻译: 发光二极管(LED)包括依次设置在基板上的基板,外延层和氮化铝(AlN)层。 AlN层包括彼此分离的多个叠层,其中外延层完全覆盖AlN层的多个叠层。 具有多个堆叠的AlN层通过LED的顶部平面反射向上反射由外延层产生的向上的光并且朝向衬底向下反射到LED的外部。 还公开了一种用于形成LED的方法。

    Method for fabricating semiconductor lighting chip
    5.
    发明授权
    Method for fabricating semiconductor lighting chip 失效
    制造半导体照明芯片的方法

    公开(公告)号:US08394653B2

    公开(公告)日:2013-03-12

    申请号:US13216248

    申请日:2011-08-24

    IPC分类号: H01L21/00

    CPC分类号: H01L33/24 H01L33/005

    摘要: A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate with a first block layer dividing an upper surface of the substrate into a plurality of epitaxial regions; forming a first semiconductor layer on the epitaxial regions; forming a second block layer partly covering the first semiconductor layer; forming a lighting structure on an uncovered portion of the first semiconductor layer; removing the first and the second block layers thereby defining clearances at the bottom surfaces of the first semiconductor layer and the lighting structure; and permeating etching solution into the first and second clearances to etch the first semiconductor layer and the lighting structure, thereby to form each of the first semiconductor layer and the lighting structure with an inverted frustum-shaped structure.

    摘要翻译: 一种制造半导体照明芯片的方法包括以下步骤:向衬底提供将衬底的上表面分成多个外延区域的第一块层; 在所述外延区上形成第一半导体层; 形成部分地覆盖所述第一半导体层的第二块层; 在所述第一半导体层的未覆盖部分上形成照明结构; 去除第一和第二块层,从而在第一半导体层和照明结构的底表面处限定间隙; 并将渗透的蚀刻溶液浸入第一和第二间隙中以蚀刻第一半导体层和照明结构,由此形成具有倒立的截头锥形结构的第一半导体层和照明结构中的每一个。

    Light emitting diode and manufacturing method thereof
    6.
    发明授权
    Light emitting diode and manufacturing method thereof 有权
    发光二极管及其制造方法

    公开(公告)号:US08946737B2

    公开(公告)日:2015-02-03

    申请号:US13570214

    申请日:2012-08-08

    IPC分类号: H01L33/00

    CPC分类号: H01L33/22 H01L33/007

    摘要: A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 μm to 2.5 μm.

    摘要翻译: 发光二极管(LED)包括衬底,缓冲层和外延结构。 衬底具有形成在其上的图案化结构的第一表面。 图案形成结构包括多个突起。 缓冲层布置在基板的第一表面上。 外延结构布置在缓冲层上。 外延结构包括顺序地布置在缓冲层上的第一半导体层,有源层和第二半导体层。 第一半导体层具有附着到有源层的第二表面。 每个突起的峰值与第一半导体层的第二表面之间的距离为0.5μm至2.5μm。

    Light emitting diode chip and method of manufacturing the same
    8.
    发明授权
    Light emitting diode chip and method of manufacturing the same 失效
    发光二极管芯片及其制造方法

    公开(公告)号:US08461619B2

    公开(公告)日:2013-06-11

    申请号:US13397688

    申请日:2012-02-16

    IPC分类号: H01L33/36

    摘要: An LED chip includes a substrate, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first electrode and a second electrode formed on the substrate in sequence. A surface of the first type semiconductor layer away from the substrate comprises an exposed first area and a second area covered by the light-emitting layer. The first electrode is formed on the exposed first area of the substrate. A number of recesses are defined in the second area of the surface of the first type semiconductor layer. The recesses are spaced apart from each other and arranged in sequence in a direction away from the first electrode; depths of the recesses gradually decrease following an increase of a distance between the recesses and the first electrode. The second electrode is formed on the second type semiconductor layer.

    摘要翻译: LED芯片依次包括基板,第一类型半导体层,发光层,第二类型半导体层,第一电极和第二电极。 离开衬底的第一类型半导体层的表面包括暴露的第一区域和被发光层覆盖的第二区域。 第一电极形成在基板的暴露的第一区域上。 在第一类型半导体层的表面的第二区域中限定多个凹部。 凹部彼此间隔开并且沿远离第一电极的方向依次布置; 随着凹部和第一电极之间的距离的增加,凹部的深度逐渐减小。 第二电极形成在第二类型半导体层上。

    Light emitting element package
    10.
    发明授权
    Light emitting element package 失效
    发光元件封装

    公开(公告)号:US08536590B2

    公开(公告)日:2013-09-17

    申请号:US13113082

    申请日:2011-05-23

    IPC分类号: H01L29/18

    摘要: A light emitting element package includes a substrate, at least two light emitting element modules and an encapsulation member. The substrate includes a circuit layer. The circuit layer includes a plurality of solder pads. The at least two light emitting element modules are mounted on the substrate. Each of the at least two light emitting element modules includes a plurality of light emitting elements. Each light emitting element of the at least two light emitting element modules is electrically coupled to neighboring light emitting element in serial through the solder pads. The at least two light emitting element modules are reversely arranged. The encapsulation member is configured to encapsulate the at least two light emitting element modules on the substrate.

    摘要翻译: 发光元件封装包括衬底,至少两个发光元件模块和封装构件。 基板包括电路层。 电路层包括多个焊盘。 至少两个发光元件模块安装在基板上。 所述至少两个发光元件模块中的每一个包括多个发光元件。 所述至少两个发光元件模块的每个发光元件通过所述焊盘电连接到相邻的发光元件。 至少两个发光元件模块相反地布置。 封装构件被构造成将至少两个发光元件模块封装在基板上。