发明授权
US08755227B2 NAND flash memory unit, NAND flash memory array, and methods for operating them
有权
NAND闪存单元，NAND闪存阵列及其操作方法
- 专利标题： NAND flash memory unit, NAND flash memory array, and methods for operating them
- 专利标题（中）： NAND闪存单元，NAND闪存阵列及其操作方法
-
申请号： US13361916申请日： 2012-01-30
-
公开(公告)号： US08755227B2公开(公告)日： 2014-06-17
- 发明人: Wei Lin , Riichiro Shirota , Nina Mitiukhina , Tsai-Hao Kuo
- 申请人： Wei Lin , Riichiro Shirota , Nina Mitiukhina , Tsai-Hao Kuo
- 申请人地址： TW Miaoli
- 专利权人： Phison Electronics Corp.
- 当前专利权人： Phison Electronics Corp.
- 当前专利权人地址： TW Miaoli
- 代理机构： Jianq Chyun IP Office
- 主分类号： G11C16/00
- IPC分类号： G11C16/00 ; G11C16/04 ; G11C16/10 ; G11C16/14
摘要：
A NAND flash memory unit is described, including a string of memory cells connected in series, S/D regions coupled to two terminals of the string, at least one select transistor couple between a terminal of the string and an S/D region, and at least one erase transistor couple between the at least one select transistor and an S/D region. The select transistor is for selecting the string of memory cells. The erase transistor is for reducing Vt-shift of the select transistor.
公开/授权文献
信息查询
