Invention Grant
- Patent Title: Dopant-containing contact material
- Patent Title (中): 含掺杂剂的接触材料
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Application No.: US12793456Application Date: 2010-06-03
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Publication No.: US08766088B2Publication Date: 2014-07-01
- Inventor: Long Cheng , Akhlesh Gupta , Anke Abken , Benyamin Buller
- Applicant: Long Cheng , Akhlesh Gupta , Anke Abken , Benyamin Buller
- Applicant Address: US OH Perrysburg
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US OH Perrysburg
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/0296
Abstract:
A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.
Public/Granted literature
- US20100326491A1 DOPANT-CONTAINING CONTACT MATERIAL Public/Granted day:2010-12-30
Information query
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