发明授权
- 专利标题: Reduced stress TSV and interposer structures
- 专利标题(中): 减少应力TSV和插入结构
-
申请号: US13492064申请日: 2012-06-08
-
公开(公告)号: US08772946B2公开(公告)日: 2014-07-08
- 发明人: Cyprian Emeka Uzoh , Charles G. Woychik , Terrence Caskey , Kishor V. Desai , Huailiang Wei , Craig Mitchell , Belgacem Haba
- 申请人: Cyprian Emeka Uzoh , Charles G. Woychik , Terrence Caskey , Kishor V. Desai , Huailiang Wei , Craig Mitchell , Belgacem Haba
- 申请人地址: US CA San Jose
- 专利权人: Invensas Corporation
- 当前专利权人: Invensas Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L29/40
摘要:
A component can include a substrate and a conductive via extending within an opening in the substrate. The substrate can have first and second opposing surfaces. The opening can extend from the first surface towards the second surface and can have an inner wall extending away from the first surface. A dielectric material can be exposed at the inner wall. The conductive via can define a relief channel within the opening adjacent the first surface. The relief channel can have an edge within a first distance from the inner wall in a direction of a plane parallel to and within five microns below the first surface, the first distance being the lesser of one micron and five percent of a maximum width of the opening in the plane. The edge can extend along the inner wall to span at least five percent of a circumference of the inner wall.
公开/授权文献
- US20130328186A1 REDUCED STRESS TSV AND INTERPOSER STRUCTURES 公开/授权日:2013-12-12
信息查询
IPC分类: