Invention Grant
- Patent Title: Photoresist composition and method of fabricating thin film transistor substrate
- Patent Title (中): 光刻胶组合物和制造薄膜晶体管衬底的方法
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Application No.: US12620988Application Date: 2009-11-18
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Publication No.: US08790859B2Publication Date: 2014-07-29
- Inventor: Sang-Hyun Yun , Woo-Seok Jeon , Jung-In Park , Hi-Kuk Lee , Byung-Uk Kim , Dong-Min Kim , Seung-Ki Kim , Ja-Hun Byeon
- Applicant: Sang-Hyun Yun , Woo-Seok Jeon , Jung-In Park , Hi-Kuk Lee , Byung-Uk Kim , Dong-Min Kim , Seung-Ki Kim , Ja-Hun Byeon
- Applicant Address: KR Yongin
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2008-0135908 20081229
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/022 ; G03F7/023 ; H01L29/66 ; H01L21/336
Abstract:
The present invention relates to a photoresist composition for digital exposure and a method of fabricating a thin film transistor substrate. The photoresist composition for digital exposure includes a binder resin including a novolak resin and a compound represented by the chemical formula (1), a photosensitizer including a diazide-based compound, and a solvent: wherein R1-R9 each include a hydrogen atom, an alkyl group, or a benzyl group, a is an integer from 0 to 10, b is an integer from 0 to 100, and c is an integer from 0 to 10.
Public/Granted literature
- US20100167476A1 PHOTORESIST COMPOSITION AND METHOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE Public/Granted day:2010-07-01
Information query
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