Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same
    3.
    发明授权
    Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same 有权
    光敏树脂组合物,薄膜晶体管基板的制造方法以及使用该薄膜晶体管基板的公共电极基板的制造方法

    公开(公告)号:US07799509B2

    公开(公告)日:2010-09-21

    申请号:US11445846

    申请日:2006-06-02

    IPC分类号: G03F7/30 G03F7/023

    摘要: A photosensitive resin composition for an organic layer pattern includes about 100 parts by weight of an acryl-based copolymer and about 5 to about 100 parts by weight of a 1,2-quinonediazide compound. The acryl-based copolymer is prepared by copolymerizing about 5 to about 60 percent by weight of an isobonyl carboxylate-based compound based on a total weight of the acryl-based copolymer, about 10 to about 30 percent by weight of an unsaturated compound carrying an epoxy group, about 20 to about 40 percent by weight of an olefin-based unsaturated compound, and about 10 to about 40 percent by weight of one selected from unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, and a mixture thereof. Methods of manufacturing a TFT substrate and a common electrode substrate using the photosensitive resin composition are also provided. Advantageously, the organic layer pattern may have a mountain structure having an improved local flatness without concave and convex structures.

    摘要翻译: 用于有机层图案的感光性树脂组合物包括约100重量份的丙烯酸类共聚物和约5至约100重量份的1,2-醌二叠氮化合物。 基于丙烯酸类的共聚物通过基于丙烯酸类共聚物的总重量共聚约5至约60重量%的基于羧酸异冰片的化合物来制备,约10至约30重量%的不饱和化合物携带 约20至约40重量%的烯烃基不饱和化合物,和约10至约40重量%的选自不饱和羧酸,不饱和羧酸酐及其混合物的一种。 还提供了使用该感光性树脂组合物制造TFT基板和公共电极基板的方法。 有利地,有机层图案可以具有具有改进的局部平坦度而没有凹凸结构的山体结构。

    Method of fabricating thin film transistor substrate and negative photoresist composition used therein
    5.
    发明授权
    Method of fabricating thin film transistor substrate and negative photoresist composition used therein 有权
    制造薄膜晶体管基板及其中使用的负型光致抗蚀剂组合物的方法

    公开(公告)号:US08257905B2

    公开(公告)日:2012-09-04

    申请号:US12685545

    申请日:2010-01-11

    IPC分类号: G03F7/004 G03F7/30

    摘要: A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent:

    摘要翻译: 提供了制造其中使用的薄膜晶体管基板和负型光致抗蚀剂组合物的方法,其可以降低图案劣化。 制造薄膜晶体管基板的方法包括在基板上形成由导电材料构成的导电膜,在导电膜上形成由负性光致抗蚀剂组合物构成的蚀刻图案,并使用该导电膜蚀刻导电膜形成导电图案 蚀刻图案作为蚀刻掩模,其中负性光致抗蚀剂组合物包含10-50重量份的包含可溶于碱显影液的羟基的酚醛清漆树脂,0.5-10重量份由 按照下式(1),将0.5-10重量份由下式(2)表示的第二光酸反应产物,1-20重量份的交联剂和10-90重量份的溶剂 :

    METHOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE AND NEGATIVE PHOTORESIST COMPOSITION USED THEREIN
    6.
    发明申请
    METHOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE AND NEGATIVE PHOTORESIST COMPOSITION USED THEREIN 有权
    制造薄膜晶体管基板的方法及其使用的负极光电组合物

    公开(公告)号:US20100203449A1

    公开(公告)日:2010-08-12

    申请号:US12685545

    申请日:2010-01-11

    IPC分类号: G03F7/20 G03F7/004

    摘要: A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent:

    摘要翻译: 提供了制造其中使用的薄膜晶体管基板和负型光致抗蚀剂组合物的方法,其可以降低图案劣化。 制造薄膜晶体管基板的方法包括在基板上形成由导电材料构成的导电膜,在导电膜上形成由负性光致抗蚀剂组合物构成的蚀刻图案,并使用该导电膜蚀刻导电膜形成导电图案 蚀刻图案作为蚀刻掩模,其中负性光致抗蚀剂组合物包含10-50重量份的包含可溶于碱显影液的羟基的酚醛清漆树脂,0.5-10重量份由 按照下式(1),将0.5-10重量份由下式(2)表示的第二光酸反应产物,1-20重量份的交联剂和10-90重量份的溶剂 :

    Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same
    8.
    发明申请
    Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same 有权
    光敏树脂组合物,薄膜晶体管基板的制造方法以及使用该薄膜晶体管基板的公共电极基板的制造方法

    公开(公告)号:US20060275700A1

    公开(公告)日:2006-12-07

    申请号:US11445846

    申请日:2006-06-02

    IPC分类号: G03C1/00

    摘要: A photosensitive resin composition for an organic layer pattern includes about 100 parts by weight of an acryl-based copolymer and about 5 to about 100 parts by weight of a 1,2-quinonediazide compound. The acryl-based copolymer is prepared by copolymerizing about 5 to about 60 percent by weight of an isobonyl carboxylate-based compound based on a total weight of the acryl-based copolymer, about 10 to about 30 percent by weight of an unsaturated compound carrying an epoxy group, about 20 to about 40 percent by weight of an olefin-based unsaturated compound, and about 10 to about 40 percent by weight of one selected from unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, and a mixture thereof. Methods of manufacturing a TFT substrate and a common electrode substrate using the photosensitive resin composition are also provided. Advantageously, the organic layer pattern may have a mountain structure having an improved local flatness without concave and convex structures.

    摘要翻译: 用于有机层图案的感光性树脂组合物包括约100重量份的丙烯酸类共聚物和约5至约100重量份的1,2-醌二叠氮化合物。 基于丙烯酸类的共聚物通过基于丙烯酸类共聚物的总重量共聚约5至约60重量%的基于羧酸异冰片的化合物来制备,约10至约30重量%的不饱和化合物携带 约20至约40重量%的烯烃基不饱和化合物,和约10至约40重量%的选自不饱和羧酸,不饱和羧酸酐及其混合物的一种。 还提供了使用该感光性树脂组合物制造TFT基板和公共电极基板的方法。 有利地,有机层图案可以具有具有改进的局部平坦度而没有凹凸结构的山体结构。

    Display device driven by electric field
    10.
    发明授权
    Display device driven by electric field 有权
    显示设备由电场驱动

    公开(公告)号:US08687266B2

    公开(公告)日:2014-04-01

    申请号:US13503937

    申请日:2010-10-29

    IPC分类号: G02B26/00

    摘要: The present invention relates to an electric-field drive display device. According to one embodiment of the present invention, the electric-field drive display device comprises: a first substrate; a first electrode which is formed on the first substrate; a second electrode which is formed on the first substrate and is disposed in parallel with the first electrode; a drive partition wall which is formed on the first electrode and the second electrode and has a plurality of opening and closing holes; and a plurality of drive bodies which are disposed inside each of the opening and closing holes. Consequently, the electric-field drive display device according to one embodiment of the present invention can adjust the amount of light transmitted and so display the desired image by adjusting the positions of the drive bodies in the horizontal direction through the use of electrical force.

    摘要翻译: 电场驱动显示装置技术领域本发明涉及电场驱动显示装置。 根据本发明的一个实施例,电场驱动显示装置包括:第一基板; 形成在第一基板上的第一电极; 第二电极,形成在第一基板上并与第一电极平行设置; 驱动分隔壁,其形成在所述第一电极和所述第二电极上,并且具有多个开闭孔; 以及设置在每个所述开闭孔内的多个驱动体。 因此,根据本发明的一个实施例的电场驱动显示装置可以通过使用电力调节驱动体在水平方向上的位置来调节透光量并从而显示所需图像。