发明授权
US08790972B2 Methods of forming CMOS transistors using tensile stress layers and hydrogen plasma treatment
有权
使用拉伸应力层和氢等离子体处理形成CMOS晶体管的方法
- 专利标题： Methods of forming CMOS transistors using tensile stress layers and hydrogen plasma treatment
- 专利标题（中）： 使用拉伸应力层和氢等离子体处理形成CMOS晶体管的方法
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申请号： US12859644申请日： 2010-08-19
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公开(公告)号： US08790972B2公开(公告)日： 2014-07-29
- 发明人: Yong-Kuk Jeong , Laegu Kang , Kim Nam Sung , Dae-won Yang
- 申请人： Yong-Kuk Jeong , Laegu Kang , Kim Nam Sung , Dae-won Yang
- 申请人地址： KR US NY Armonk SG Singapore US TX Austin
- 专利权人： Samsung Electronics Co., Ltd.,International Business Machines Corporation,GLOBALFOUNDRIES Singapore Pte. Ltd.,Freescale Semiconductor, Inc.
- 当前专利权人： Samsung Electronics Co., Ltd.,International Business Machines Corporation,GLOBALFOUNDRIES Singapore Pte. Ltd.,Freescale Semiconductor, Inc.
- 当前专利权人地址： KR US NY Armonk SG Singapore US TX Austin
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/78 ; H01L29/66 ; H01L21/8238 ; H01L29/04 ; H01L29/10 ; H01L21/28
摘要：
Methods of forming integrated circuit devices include forming a PMOS transistor having a SiGe channel region therein and then exposing at least a portion of the PMOS transistor to a hydrogen plasma. A tensile stress layer may be formed on the PMOS transistor. The exposing step may include exposing source and drain regions of the PMOS transistor to the hydrogen plasma.