发明授权
- 专利标题： Patterned thin film dielectric layer formation
- 专利标题（中）： 图案化的薄膜介电层形成
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申请号： US13600287申请日： 2012-08-31
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公开(公告)号： US08791023B2公开(公告)日： 2014-07-29
- 发明人: Carolyn R. Ellinger , David H. Levy , Shelby F. Nelson
- 申请人： Carolyn R. Ellinger , David H. Levy , Shelby F. Nelson
- 申请人地址： US NY Rochester
- 专利权人： Eastman Kodak Company
- 当前专利权人： Eastman Kodak Company
- 当前专利权人地址： US NY Rochester
- 代理商 William R. Zimmerli
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
A method of producing an inorganic thin film dielectric material layer includes providing a substrate. A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process. The first inorganic thin film dielectric material layer is treated after its deposition. A patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present using an atomic layer deposition process.
公开/授权文献
- US20140065831A1 PATTERNED THIN FILM DIELECTRIC LAYER FORMATION 公开/授权日：2014-03-06
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