Invention Grant
- Patent Title: Substrate processing method and substrate processing system for performing the same
- Patent Title (中): 基板处理方法及其基板处理系统
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Application No.: US13314791Application Date: 2011-12-08
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Publication No.: US08795541B2Publication Date: 2014-08-05
- Inventor: Yong-Jhin Cho , Kun-Tack Lee , Hyo-San Lee , Young-Hoo Kim , Jung-Won Lee , Sang-Won Bae , Jung-Min Oh
- Applicant: Yong-Jhin Cho , Kun-Tack Lee , Hyo-San Lee , Young-Hoo Kim , Jung-Won Lee , Sang-Won Bae , Jung-Min Oh
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2010-0128776 20101216
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/02
Abstract:
In a supercritical fluid method a supercritical fluid is supplied into a process chamber. The supercritical fluid is discharged from the process chamber as a supercritical fluid process proceeds. A concentration of a target material included in the supercritical fluid discharged from the process chamber is detected during the supercritical fluid process. An end point of the supercritical fluid process may be determined based on a detected concentration of the target material.
Public/Granted literature
- US20120152898A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM FOR PERFORMING THE SAME Public/Granted day:2012-06-21
Information query
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