Invention Grant
- Patent Title: Technique to modify the microstructure of semiconducting materials
- Patent Title (中): 修改半导体材料微结构的技术
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Application No.: US13236068Application Date: 2011-09-19
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Publication No.: US08796687B2Publication Date: 2014-08-05
- Inventor: Glen Bennett Cook , Prantik Mazumder , Mallanagouda Dyamanagouda Patil , Lili Tian , Natesan Venkataraman
- Applicant: Glen Bennett Cook , Prantik Mazumder , Mallanagouda Dyamanagouda Patil , Lili Tian , Natesan Venkataraman
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent Michael W. Russell
- Main IPC: H01L29/04
- IPC: H01L29/04 ; C30B28/06 ; C30B29/06 ; C30B11/00 ; C30B13/24
Abstract:
A method of treating a sheet of semiconducting material comprises forming a sinterable first layer over each major surface of a sheet of semiconducting material, forming a second layer over each of the first layers to form a particle-coated semiconductor sheet, placing the particle-coated sheet between end members, heating the particle-coated sheet to a temperature effective to at least partially sinter the first layer and at least partially melt the semiconducting material, and cooling the particle-coated sheet to solidify the semiconducting material and form a treated sheet of semiconducting material.
Public/Granted literature
- US20120074528A1 TECHNIQUE TO MODIFY THE MICROSTRUCTURE OF SEMICONDUCTING MATERIALS Public/Granted day:2012-03-29
Information query
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