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    TECHNIQUE TO MODIFY THE MICROSTRUCTURE OF SEMICONDUCTING MATERIALS
    2.
    发明申请
    TECHNIQUE TO MODIFY THE MICROSTRUCTURE OF SEMICONDUCTING MATERIALS 有权
    修改半导体材料微观结构的技术

    公开(公告)号：US20120074528A1

    公开(公告)日：2012-03-29

    申请号：US13236068

    申请日：2011-09-19

    申请人： Glen Bennett Cook ,  Prantik Mazumder ,  Mallanagouda Dyamanagouda Patil ,  Lili Tian ,  Natesan Venkataraman

    发明人： Glen Bennett Cook ,  Prantik Mazumder ,  Mallanagouda Dyamanagouda Patil ,  Lili Tian ,  Natesan Venkataraman

    IPC分类号： H01L29/30 ,  H01L21/20

    CPC分类号： C30B11/002 ,  C30B13/24 ,  C30B28/06 ,  C30B29/06

    摘要： A method of treating a sheet of semiconducting material comprises forming a sinterable first layer over each major surface of a sheet of semiconducting material, forming a second layer over each of the first layers to form a particle-coated semiconductor sheet, placing the particle-coated sheet between end members, heating the particle-coated sheet to a temperature effective to at least partially sinter the first layer and at least partially melt the semiconducting material, and cooling the particle-coated sheet to solidify the semiconducting material and form a treated sheet of semiconducting material.

    摘要翻译： 一种处理半导体材料片的方法包括在半导体材料片的每个主表面上形成可烧结的第一层，在每个第一层上形成第二层以形成颗粒涂覆的半导体片，将颗粒涂覆 将所述颗粒包覆的片材加热到有效地至少部分地烧结所述第一层并且至少部分地熔化所述半导体材料的温度，以及冷却所述颗粒涂覆的片材以固化所述半导体材料并形成经处理的片材 半导体材料。

    COMPOSITE ACTIVE MOLDS AND METHODS OF MAKING ARTICLES OF SEMICONDUCTING MATERIAL
    5.
    发明申请
    COMPOSITE ACTIVE MOLDS AND METHODS OF MAKING ARTICLES OF SEMICONDUCTING MATERIAL 审中-公开
    复合材料的主要成分及制备方法

    公开(公告)号：US20120299218A1

    公开(公告)日：2012-11-29

    申请号：US13117440

    申请日：2011-05-27

    申请人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman ,  Natesan Venkataraman

    发明人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman ,  Natesan Venkataraman

    IPC分类号： B28B1/38 ,  B28B7/42

    CPC分类号： C30B15/007 ,  C30B15/36 ,  C30B29/06

    摘要： The disclosure relates to a substrate mold comprising a shell material having an external surface configured to engage with molten semiconducting material, and an internal surface configured as a thermal transfer surface to transfer heat therethrough, and a core defined within the shell material and configured to remove heat from the shell material through the thermal transfer surface of the shell material. The substrate mold is configured to be immersed into the molten semiconducting material, and the external surface of the shell material is configured to have solidified molten semiconducting material formed thereon.

    摘要翻译： 本公开涉及一种基材模具，其包括壳体材料，该外壳材料具有被配置为与熔融半导体材料接合的外表面，以及被配置为热转印表面以传递热量的内表面，以及限定在外壳材料内的构造物， 外壳材料通过外壳材料的热传递表面的热量。 衬底模具被配置为浸入熔融半导体材料中，并且外壳材料的外表面被配置为具有在其上形成的凝固的熔融半导体材料。

    Method of making an article of semiconducting material
    10.
    发明授权
    Method of making an article of semiconducting material 失效
    制造半导体材料制品的方法

    公开(公告)号：US08480803B2

    公开(公告)日：2013-07-09

    申请号：US12609987

    申请日：2009-10-30

    申请人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman ,  Christopher Scott Thomas

    发明人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman ,  Christopher Scott Thomas

    IPC分类号： C30B11/14

    CPC分类号： C30B15/007 ,  C30B19/062 ,  C30B29/06

    摘要： A method of making an article of a semiconducting material involves withdrawing from a melt of molten semiconducting material a solid mold having already formed on an external surface of the mold a solid layer of the semiconducting material. During the act of withdrawal, one or more of a temperature, a force, and a relative rate of withdrawal are controlled in order to achieve one or more desired attributes in a solid overlayer of semiconductor material that is formed over the solid layer during the withdrawal.

    摘要翻译： 制造半导体材料的方法包括从熔融半导体材料的熔体中取出已经在模具的外表面上形成半导体材料的固体层的固体模具。 在退出动作期间，控制一个或多个温度，力和相对退出速率，以便在退出期间在固体层上形成的半导体材料的固体覆层中实现一个或多个期望属性 。