Invention Grant
- Patent Title: Amplifier with floating well
- Patent Title (中): 放大器浮动井
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Application No.: US13445955Application Date: 2012-04-13
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Publication No.: US08797104B2Publication Date: 2014-08-05
- Inventor: Hsieh-Hung Hsieh , Yi-Hsuan Liu , Chiao-Han Lee , Tzu-Jin Yeh , Chewn-Pu Jou
- Applicant: Hsieh-Hung Hsieh , Yi-Hsuan Liu , Chiao-Han Lee , Tzu-Jin Yeh , Chewn-Pu Jou
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H03F3/14
- IPC: H03F3/14

Abstract:
A low-noise amplifier includes a first transistor having a gate configured to receive an oscillating input signal and a source coupled to ground. A second transistor has a source coupled to a drain of the first transistor, a gate coupled to a bias voltage, and a drain coupled to an output node. At least one of the first and second transistors includes a floating deep n-well that is coupled to an isolation circuit.
Public/Granted literature
- US20130271223A1 AMPLIFIER WITH FLOATING WELL Public/Granted day:2013-10-17
Information query
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