发明授权
- 专利标题: Deposition method and method for manufacturing light-emitting device
- 专利标题(中): 沉积方法和制造发光器件的方法
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申请号: US12472562申请日: 2009-05-27
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公开(公告)号: US08802185B2公开(公告)日: 2014-08-12
- 发明人: Shunpei Yamazaki , Koichiro Tanaka , Hisao Ikeda , Satoshi Seo
- 申请人: Shunpei Yamazaki , Koichiro Tanaka , Hisao Ikeda , Satoshi Seo
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2008-141521 20080529
- 主分类号: B05D5/12
- IPC分类号: B05D5/12
摘要:
An object is to provide a deposition method for smoothly obtaining desired pattern shapes of material layers and a method for manufacturing a light-emitting device while throughput is improved when a plurality of different material layers is stacked on a substrate. A material layer is selectively formed in advance in a position overlapped with a light absorption layer over a first substrate by pump feeding. Three kinds of light-emitting layers are deposited on one deposition substrate. This first substrate and a second substrate that is to be a deposition target substrate are arranged to face each other, and the light absorption layer is heated by being irradiated with light, whereby a film is deposited on the second substrate. Three kinds of light-emitting layers can be deposited with positional accuracy by performing only one position alignment before light irradiation.
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