发明授权
US08803243B2 Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor
有权
具有通过金属栅极导体连接的栅极结构的互补金属氧化物半导体（CMOS）器件
- 专利标题： Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor
- 专利标题（中）： 具有通过金属栅极导体连接的栅极结构的互补金属氧化物半导体（CMOS）器件
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申请号： US13342435申请日： 2012-01-03
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公开(公告)号： US08803243B2公开(公告)日： 2014-08-12
- 发明人: Yue Liang , Dureseti Chidambarrao , Brian J. Greene , William K. Henson , Unoh Kwon , Shreesh Narasimha , Xiaojun Yu
- 申请人： Yue Liang , Dureseti Chidambarrao , Brian J. Greene , William K. Henson , Unoh Kwon , Shreesh Narasimha , Xiaojun Yu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L21/70
- IPC分类号： H01L21/70
摘要：
A complementary metal oxide semiconductor (CMOS) device including a substrate including a first active region and a second active region, wherein each of the first active region and second active region of the substrate are separated by from one another by an isolation region. A n-type semiconductor device is present on the first active region of the substrate, in which the n-type semiconductor device includes a first portion of a gate structure. A p-type semiconductor device is present on the second active region of the substrate, in which the p-type semiconductor device includes a second portion of the gate structure. A connecting gate portion provides electrical connectivity between the first portion of the gate structure and the second portion of the gate structure. Electrical contact to the connecting gate portion is over the isolation region, and is not over the first active region and/or the second active region.
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