发明授权
US08803312B2 Method for manufacturing semiconductor devices having a glass substrate
有权
具有玻璃基板的半导体器件的制造方法
- 专利标题: Method for manufacturing semiconductor devices having a glass substrate
- 专利标题(中): 具有玻璃基板的半导体器件的制造方法
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申请号: US13966492申请日: 2013-08-14
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公开(公告)号: US08803312B2公开(公告)日: 2014-08-12
- 发明人: Carsten von Koblinski , Gerald Lackner , Karin Schrettlinger , Markus Ottowitz
- 申请人: Infineon Technologies Austria AG
- 申请人地址: AT Villach
- 专利权人: Infineon Technologies Austria AG
- 当前专利权人: Infineon Technologies Austria AG
- 当前专利权人地址: AT Villach
- 代理机构: Dicke, Billig & Czaja, PLLC
- 主分类号: H01L23/12
- IPC分类号: H01L23/12 ; H01L23/06
摘要:
A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallization region is formed on the machined second surface of the semiconductor wafer.
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