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1.发明授权公开(公告)号：US08803312B2
公开(公告)日：2014-08-12
申请号：US13966492
申请日：2013-08-14
CPC分类号： H01L23/49811 , H01L21/56 , H01L21/561 , H01L21/568 , H01L21/78 , H01L23/3107 , H01L23/3135 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L29/7802 , H01L29/8611 , H01L2224/02122 , H01L2224/03015 , H01L2224/03019 , H01L2224/0332 , H01L2224/0345 , H01L2224/0346 , H01L2224/03462 , H01L2224/03464 , H01L2224/03848 , H01L2224/04042 , H01L2224/05124 , H01L2224/05139 , H01L2224/05166 , H01L2224/05553 , H01L2224/05554 , H01L2224/05571 , H01L2224/05647 , H01L2224/0603 , H01L2224/06181 , H01L2224/32225 , H01L2224/3223 , H01L2224/32245 , H01L2224/48227 , H01L2224/4823 , H01L2224/48247 , H01L2224/48463 , H01L2224/4903 , H01L2224/73265 , H01L2224/94 , H01L2924/00014 , H01L2924/01068 , H01L2924/01078 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10335 , H01L2924/10338 , H01L2924/10351 , H01L2924/10373 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/15788 , H01L2924/181 , H01L2924/3511 , H01L2924/00012 , H01L2224/03 , H01L2924/00 , H01L2224/05552 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallization region is formed on the machined second surface of the semiconductor wafer.
摘要翻译： 公开了半导体器件的制造方法。 提供了具有与第一表面相对的第一表面和第二表面的半导体晶片。 提供了在接合表面处具有至少一个空腔和开口的第一玻璃基板。 将第一玻璃基板接合到半导体晶片的第一表面，使得金属焊盘被布置在第一玻璃基板的相应空腔或开口内。 加工半导体晶片的第二表面。 在半导体晶片的加工的第二表面上形成至少一个金属化区域。
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2.发明授权公开(公告)号：US08865522B2
公开(公告)日：2014-10-21
申请号：US13865579
申请日：2013-04-18
IPC分类号： H01L21/00 , H01L21/30 , H01L23/12 , H01L23/06 , H01L23/495 , H01L21/56 , H01L23/00 , H01L23/31 , H01L21/78 , H01L29/78 , H01L29/861
CPC分类号： H01L24/83 , H01L21/56 , H01L21/561 , H01L21/568 , H01L21/78 , H01L23/3107 , H01L23/3135 , H01L23/49534 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L29/7802 , H01L29/8611 , H01L2224/02122 , H01L2224/03015 , H01L2224/03019 , H01L2224/0332 , H01L2224/0345 , H01L2224/0346 , H01L2224/03462 , H01L2224/03464 , H01L2224/03848 , H01L2224/04042 , H01L2224/05124 , H01L2224/05139 , H01L2224/05166 , H01L2224/05553 , H01L2224/05571 , H01L2224/05647 , H01L2224/0603 , H01L2224/06181 , H01L2224/27013 , H01L2224/29101 , H01L2224/2929 , H01L2224/32225 , H01L2224/3223 , H01L2224/32245 , H01L2224/32503 , H01L2224/32507 , H01L2224/48091 , H01L2224/48227 , H01L2224/4823 , H01L2224/48247 , H01L2224/48463 , H01L2224/4903 , H01L2224/73265 , H01L2224/83192 , H01L2224/8381 , H01L2224/83815 , H01L2224/83862 , H01L2224/8389 , H01L2224/94 , H01L2924/00014 , H01L2924/01068 , H01L2924/01078 , H01L2924/01322 , H01L2924/01327 , H01L2924/0781 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10335 , H01L2924/10338 , H01L2924/10351 , H01L2924/10373 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/15788 , H01L2924/181 , H01L2924/3511 , H01L2924/00012 , H01L2224/03 , H01L2924/00 , H01L2224/45099 , H01L2924/014 , H01L2224/05552
摘要： A method for connecting a semiconductor chip to a metal layer of a carrier substrate is disclosed. A semiconductor chip is provided which has a first side, a second side opposite the first side, a glass substrate bonded to the second side of the semiconductor chip and including at least one opening leaving an area of the second side of the semiconductor chip uncovered by the glass substrate, and a metallization region arranged in the opening of the glass substrate and electrically contacting the second side of the semiconductor chip. The semiconductor chip with the bonded glass substrate is brought onto a metal layer of a carrier substrate. A firm mechanical and electrical connection is formed between the metal layer of the carrier substrate and the metallization region.
摘要翻译： 公开了一种用于将半导体芯片连接到载体衬底的金属层的方法。 提供一种半导体芯片，其具有第一侧，与第一侧相对的第二侧，接合到半导体芯片的第二侧的玻璃基板，并且包括至少一个开口，留下半导体芯片的第二面的区域， 玻璃基板和布置在玻璃基板的开口中的金属化区域，并与半导体芯片的第二面电接触。 具有粘合玻璃基板的半导体芯片被带到载体基板的金属层上。 在载体基板的金属层和金属化区域之间形成牢固的机械和电连接。
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3.发明申请公开(公告)号：US20130228905A1
公开(公告)日：2013-09-05
申请号：US13865579
申请日：2013-04-18
IPC分类号： H01L23/00 , H01L23/495
CPC分类号： H01L24/83 , H01L21/56 , H01L21/561 , H01L21/568 , H01L21/78 , H01L23/3107 , H01L23/3135 , H01L23/49534 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L29/7802 , H01L29/8611 , H01L2224/02122 , H01L2224/03015 , H01L2224/03019 , H01L2224/0332 , H01L2224/0345 , H01L2224/0346 , H01L2224/03462 , H01L2224/03464 , H01L2224/03848 , H01L2224/04042 , H01L2224/05124 , H01L2224/05139 , H01L2224/05166 , H01L2224/05553 , H01L2224/05571 , H01L2224/05647 , H01L2224/0603 , H01L2224/06181 , H01L2224/27013 , H01L2224/29101 , H01L2224/2929 , H01L2224/32225 , H01L2224/3223 , H01L2224/32245 , H01L2224/32503 , H01L2224/32507 , H01L2224/48091 , H01L2224/48227 , H01L2224/4823 , H01L2224/48247 , H01L2224/48463 , H01L2224/4903 , H01L2224/73265 , H01L2224/83192 , H01L2224/8381 , H01L2224/83815 , H01L2224/83862 , H01L2224/8389 , H01L2224/94 , H01L2924/00014 , H01L2924/01068 , H01L2924/01078 , H01L2924/01322 , H01L2924/01327 , H01L2924/0781 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10335 , H01L2924/10338 , H01L2924/10351 , H01L2924/10373 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/15788 , H01L2924/181 , H01L2924/3511 , H01L2924/00012 , H01L2224/03 , H01L2924/00 , H01L2224/45099 , H01L2924/014 , H01L2224/05552
摘要： A method for connecting a semiconductor chip to a metal layer of a carrier substrate is disclosed. A semiconductor chip is provided which has a first side, a second side opposite the first side, a glass substrate bonded to the second side of the semiconductor chip and including at least one opening leaving an area of the second side of the semiconductor chip uncovered by the glass substrate, and a metallisation region arranged in the opening of the glass substrate and electrically contacting the second side of the semiconductor chip. The semiconductor chip with the bonded glass substrate is brought onto a metal layer of a carrier substrate. A firm mechanical and electrical connection is formed between the metal layer of the carrier substrate and the metallisation region.
摘要翻译： 公开了一种用于将半导体芯片连接到载体衬底的金属层的方法。 提供一种半导体芯片，其具有第一侧，与第一侧相对的第二侧，接合到半导体芯片的第二侧的玻璃基板，并且包括至少一个开口，留下半导体芯片的第二面的区域， 玻璃基板和布置在玻璃基板的开口中并与半导体芯片的第二面电接触的金属化区域。 具有粘合玻璃基板的半导体芯片被带到载体基板的金属层上。 在载体衬底的金属层和金属化区域之间形成牢固的机械和电连接。
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4.发明申请公开(公告)号：US20130328183A1
公开(公告)日：2013-12-12
申请号：US13966492
申请日：2013-08-14
IPC分类号： H01L23/498
CPC分类号： H01L23/49811 , H01L21/56 , H01L21/561 , H01L21/568 , H01L21/78 , H01L23/3107 , H01L23/3135 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L29/7802 , H01L29/8611 , H01L2224/02122 , H01L2224/03015 , H01L2224/03019 , H01L2224/0332 , H01L2224/0345 , H01L2224/0346 , H01L2224/03462 , H01L2224/03464 , H01L2224/03848 , H01L2224/04042 , H01L2224/05124 , H01L2224/05139 , H01L2224/05166 , H01L2224/05553 , H01L2224/05554 , H01L2224/05571 , H01L2224/05647 , H01L2224/0603 , H01L2224/06181 , H01L2224/32225 , H01L2224/3223 , H01L2224/32245 , H01L2224/48227 , H01L2224/4823 , H01L2224/48247 , H01L2224/48463 , H01L2224/4903 , H01L2224/73265 , H01L2224/94 , H01L2924/00014 , H01L2924/01068 , H01L2924/01078 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10335 , H01L2924/10338 , H01L2924/10351 , H01L2924/10373 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/15788 , H01L2924/181 , H01L2924/3511 , H01L2924/00012 , H01L2224/03 , H01L2924/00 , H01L2224/05552 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.
摘要翻译： 公开了半导体器件的制造方法。 提供了具有与第一表面相对的第一表面和第二表面的半导体晶片。 提供了在接合表面处具有至少一个空腔和开口的第一玻璃基板。 将第一玻璃基板接合到半导体晶片的第一表面，使得金属焊盘被布置在第一玻璃基板的相应空腔或开口内。 加工半导体晶片的第二表面。 在半导体晶片的加工的第二表面上形成至少一个金属化区域。
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