发明授权
- 专利标题： TSV structures and methods for forming the same
- 专利标题（中）： TSV结构及其形成方法
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申请号： US13311692申请日： 2011-12-06
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公开(公告)号： US08803316B2公开(公告)日： 2014-08-12
- 发明人: Yung-Chi Lin , Hsin-Yu Chen , Wen-Chih Chiou , Ku-Feng Yang , Tsang-Jiuh Wu , Jing-Cheng Lin
- 申请人： Yung-Chi Lin , Hsin-Yu Chen , Wen-Chih Chiou , Ku-Feng Yang , Tsang-Jiuh Wu , Jing-Cheng Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater and Matsil, L.L.P.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.
公开/授权文献
- US20130140690A1 TSV Structures and Methods for Forming the Same 公开/授权日：2013-06-06
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