发明授权
- 专利标题: Semiconductor device and method for manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US13554204申请日: 2012-07-20
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公开(公告)号: US08809970B2公开(公告)日: 2014-08-19
- 发明人: Masamichi Suzuki , Tatsuo Shimizu , Atsuhiro Kinoshita
- 申请人: Masamichi Suzuki , Tatsuo Shimizu , Atsuhiro Kinoshita
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/02 ; H01L21/28 ; H01L29/51 ; H01L29/788 ; H01L49/02
摘要:
A semiconductor device includes a semiconductor substrate, a source region, a drain region, an insulating film and a gate electrode. The source region is formed in the semiconductor substrate. The drain region is formed in the semiconductor substrate and being separate from the source region. The insulating film is formed between the source region and the drain region and on or above the semiconductor substrate. The insulating film includes lanthanum aluminate containing at least one element selected from Si, Ge, Mg, Ca, Sr, Ba and N. The lanthanum aluminate contains at least one element selected from Ti, Hf and Zr. The gate electrode is formed on the insulating film.