发明授权
- 专利标题: Chemical vapor deposition with energy input
- 专利标题(中): 化学气相沉积与能量输入
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申请号: US12587228申请日: 2009-10-02
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公开(公告)号: US08815709B2公开(公告)日: 2014-08-26
- 发明人: Joshua Mangum , Eric A. Armour , William E. Quinn
- 申请人: Joshua Mangum , Eric A. Armour , William E. Quinn
- 申请人地址: US NY Plainview
- 专利权人: Veeco Instruments Inc.
- 当前专利权人: Veeco Instruments Inc.
- 当前专利权人地址: US NY Plainview
- 代理机构: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed.
公开/授权文献
- US20100087050A1 Chemical vapor deposition with energy input 公开/授权日:2010-04-08
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