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40 条记录 (耗时 0.021 秒)

    Vapor Phase Epitaxy System
    4.
    发明申请
    Vapor Phase Epitaxy System 审中-公开
    气相外延系统

    公开(公告)号：US20110174213A1

    公开(公告)日：2011-07-21

    申请号：US13121371

    申请日：2009-10-01

    申请人： Joshua Mangum ,  William E. Quinn ,  Eric A. Armour

    发明人： Joshua Mangum ,  William E. Quinn ,  Eric A. Armour

    IPC分类号： C30B25/02 ,  C23C16/455

    CPC分类号： C23C16/511 ,  C23C16/303 ,  C23C16/45551 ,  C23C16/483 ,  C30B25/105 ,  C30B29/403 ,  C30B29/406

    摘要： A vapor phase epitaxy system includes a platen that supports substrates for vapor phase epitaxy and a gas injector. The gas injector injects a first precursor gas into a first region and injects a second precursor gas into a second region. At least one electrode is positioned in the first region so that first precursor gas molecules flow proximate to the electrode. The at least one electrode is positioned to be substantially isolated from a flow of the second precursor gas. A power supply is electrically connected to the at least one electrode. The power supply generates a current that heats the at least one electrode so as to thermally activate at least some of the first precursor gas molecules flowing proximate to the at least one electrode, thereby activating first precursor gas molecules.

    摘要翻译： 气相外延系统包括支撑用于气相外延的衬底的压板和气体注入器。 气体喷射器将第一前体气体注入第一区域并将第二前体气体注入第二区域。 至少一个电极位于第一区域中，使得第一前体气体分子流到电极附近。 至少一个电极定位成与第二前体气体的流动基本隔离。 电源电连接到至少一个电极。 电源产生加热至少一个电极的电流，以便热激活靠近至少一个电极流动的至少一些第一前体气体分子，由此激活第一前体气体分子。

    Chemical vapor deposition with energy input
    6.
    发明申请
    Chemical vapor deposition with energy input 有权
    化学气相沉积与能量输入

    公开(公告)号：US20100087050A1

    公开(公告)日：2010-04-08

    申请号：US12587228

    申请日：2009-10-02

    申请人： Eric A. Armour ,  William E. Quinn ,  Joshua Mangum

    发明人： Eric A. Armour ,  William E. Quinn ,  Joshua Mangum

    IPC分类号： H01L21/363

    CPC分类号： C23C16/511 ,  C23C16/303 ,  C23C16/45551 ,  C23C16/483 ,  C30B25/105 ,  C30B29/403 ,  C30B29/406

    摘要： Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed.

    摘要翻译： 公开了将化合物半导体沉积到基底上的方法，包括将气态反应物导入含有底物的反应室中，选择性地向气体反应物之一供应能量，以赋予足够的能量来活化该反应物但不足以分解反应物，然后 在基材的表面分解反应物以与其它反应物反应。 优选的能量源是微波或红外辐射，还公开了用于实施这些方法的反应器。

    Chemical vapor deposition with energy input
    7.
    发明授权
    Chemical vapor deposition with energy input 有权
    化学气相沉积与能量输入

    公开(公告)号：US08815709B2

    公开(公告)日：2014-08-26

    申请号：US12587228

    申请日：2009-10-02

    申请人： Joshua Mangum ,  Eric A. Armour ,  William E. Quinn

    发明人： Joshua Mangum ,  Eric A. Armour ,  William E. Quinn

    IPC分类号： H01L21/20

    CPC分类号： C23C16/511 ,  C23C16/303 ,  C23C16/45551 ,  C23C16/483 ,  C30B25/105 ,  C30B29/403 ,  C30B29/406

    摘要： Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed.

    摘要翻译： 公开了将化合物半导体沉积到基底上的方法，包括将气态反应物导入含有底物的反应室中，选择性地向气体反应物之一供应能量，以赋予足够的能量来活化该反应物但不足以分解反应物，然后 在基材的表面分解反应物以与其它反应物反应。 优选的能量源是微波或红外辐射，还公开了用于实施这些方法的反应器。

    MOVABLE INJECTORS IN ROTATING DISC GAS REACTORS
    9.
    发明申请
    MOVABLE INJECTORS IN ROTATING DISC GAS REACTORS 审中-公开
    可旋转注射器旋转盘式反应器

    公开(公告)号：US20120070916A1

    公开(公告)日：2012-03-22

    申请号：US13307239

    申请日：2011-11-30

    申请人： Piero Sferlazzo ,  Alexander I. Gurary ,  Eric A. Armour ,  William E. Quinn ,  Steve Ting

    发明人： Piero Sferlazzo ,  Alexander I. Gurary ,  Eric A. Armour ,  William E. Quinn ,  Steve Ting

    IPC分类号： H01L21/66

    CPC分类号： C23C16/45589

    摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

    摘要翻译： 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。

    Linear Cluster Deposition System
    10.
    发明申请
    Linear Cluster Deposition System 审中-公开
    线性簇沉积系统

    公开(公告)号：US20120058630A1

    公开(公告)日：2012-03-08

    申请号：US12877775

    申请日：2010-09-08

    申请人： William E. Quinn ,  Alexander Gurary ,  Ajit Paranjpe ,  Maria D. Ferreira ,  Roger P. Fremgen, JR. ,  Eric A. Armour

    发明人： William E. Quinn ,  Alexander Gurary ,  Ajit Paranjpe ,  Maria D. Ferreira ,  Roger P. Fremgen, JR. ,  Eric A. Armour

    IPC分类号： H01L21/36 ,  C23C16/06 ,  C23C16/08 ,  C23C16/00 ,  C23C16/44

    摘要： A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers.

    摘要翻译： 线性簇沉积系统包括以线性水平布置定位的多个反应室。 第一和第二反应气体歧管连接到每个反应室的相应工艺气体输入口。 具有多个排气输入的废气歧管与多个反应室中的每一个的废气输出端口连接。 基板输送车辆将基板和基板载体中的至少一个输送到每个反应室的基板输送口中并至少支撑至少一个基板。 选择每个反应室的工艺气体进入工艺气体输入口的流量和每个反应室中的压力中的至少一个，使得工艺条件在至少两个反应室中基本相同。