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    Vapor Phase Epitaxy System
    3.
    发明申请
    Vapor Phase Epitaxy System 审中-公开
    气相外延系统

    公开(公告)号：US20110174213A1

    公开(公告)日：2011-07-21

    申请号：US13121371

    申请日：2009-10-01

    申请人： Joshua Mangum ,  William E. Quinn ,  Eric A. Armour

    发明人： Joshua Mangum ,  William E. Quinn ,  Eric A. Armour

    IPC分类号： C30B25/02 ,  C23C16/455

    CPC分类号： C23C16/511 ,  C23C16/303 ,  C23C16/45551 ,  C23C16/483 ,  C30B25/105 ,  C30B29/403 ,  C30B29/406

    摘要： A vapor phase epitaxy system includes a platen that supports substrates for vapor phase epitaxy and a gas injector. The gas injector injects a first precursor gas into a first region and injects a second precursor gas into a second region. At least one electrode is positioned in the first region so that first precursor gas molecules flow proximate to the electrode. The at least one electrode is positioned to be substantially isolated from a flow of the second precursor gas. A power supply is electrically connected to the at least one electrode. The power supply generates a current that heats the at least one electrode so as to thermally activate at least some of the first precursor gas molecules flowing proximate to the at least one electrode, thereby activating first precursor gas molecules.

    摘要翻译： 气相外延系统包括支撑用于气相外延的衬底的压板和气体注入器。 气体喷射器将第一前体气体注入第一区域并将第二前体气体注入第二区域。 至少一个电极位于第一区域中，使得第一前体气体分子流到电极附近。 至少一个电极定位成与第二前体气体的流动基本隔离。 电源电连接到至少一个电极。 电源产生加热至少一个电极的电流，以便热激活靠近至少一个电极流动的至少一些第一前体气体分子，由此激活第一前体气体分子。

    Chemical vapor deposition with energy input
    5.
    发明授权
    Chemical vapor deposition with energy input 有权
    化学气相沉积与能量输入

    公开(公告)号：US08815709B2

    公开(公告)日：2014-08-26

    申请号：US12587228

    申请日：2009-10-02

    申请人： Joshua Mangum ,  Eric A. Armour ,  William E. Quinn

    发明人： Joshua Mangum ,  Eric A. Armour ,  William E. Quinn

    IPC分类号： H01L21/20

    CPC分类号： C23C16/511 ,  C23C16/303 ,  C23C16/45551 ,  C23C16/483 ,  C30B25/105 ,  C30B29/403 ,  C30B29/406

    摘要： Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed.

    摘要翻译： 公开了将化合物半导体沉积到基底上的方法，包括将气态反应物导入含有底物的反应室中，选择性地向气体反应物之一供应能量，以赋予足够的能量来活化该反应物但不足以分解反应物，然后 在基材的表面分解反应物以与其它反应物反应。 优选的能量源是微波或红外辐射，还公开了用于实施这些方法的反应器。

    Chemical vapor deposition with energy input
    7.
    发明申请
    Chemical vapor deposition with energy input 有权
    化学气相沉积与能量输入

    公开(公告)号：US20100087050A1

    公开(公告)日：2010-04-08

    申请号：US12587228

    申请日：2009-10-02

    申请人： Eric A. Armour ,  William E. Quinn ,  Joshua Mangum

    发明人： Eric A. Armour ,  William E. Quinn ,  Joshua Mangum

    IPC分类号： H01L21/363

    CPC分类号： C23C16/511 ,  C23C16/303 ,  C23C16/45551 ,  C23C16/483 ,  C30B25/105 ,  C30B29/403 ,  C30B29/406

    摘要： Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed.

    摘要翻译： 公开了将化合物半导体沉积到基底上的方法，包括将气态反应物导入含有底物的反应室中，选择性地向气体反应物之一供应能量，以赋予足够的能量来活化该反应物但不足以分解反应物，然后 在基材的表面分解反应物以与其它反应物反应。 优选的能量源是微波或红外辐射，还公开了用于实施这些方法的反应器。

    Method for improving performance of a substrate carrier
    8.
    发明授权
    Method for improving performance of a substrate carrier 有权
    改善衬底载体性能的方法

    公开(公告)号：US08486726B2

    公开(公告)日：2013-07-16

    申请号：US12629467

    申请日：2009-12-02

    申请人： Joshua Mangum ,  William E. Quinn

    发明人： Joshua Mangum ,  William E. Quinn

    IPC分类号： G01R31/26 ,  C23C16/00

    CPC分类号： H01L21/67383 ,  C23C16/44 ,  H01L21/02104 ,  H01L21/67366 ,  H01L21/68735 ,  H01L21/68771 ,  H01L22/12 ,  H01L22/20

    摘要： A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier.

    摘要翻译： 改进衬底载体以改善工艺性能的方法包括在由衬底载体支撑的衬底上沉积材料或制造器件。 然后根据其在衬底载体上的对应位置来测量沉积在衬底上的层的参数。 在衬底上制造的至少一些器件的测量参数或沉积层的性质与衬底载体的物理特性相关，以获得对应于衬底载体上的多个位置的衬底载体的多个物理特性。 然后在衬底载体上的多个对应位置中的一个或多个位置修改衬底载体的物理特性，以获得作为衬底载体上的位置的函数的沉积层或制造器件的期望参数。

    WAFER CARRIER WITH SLOPED EDGE
    9.
    发明申请
    WAFER CARRIER WITH SLOPED EDGE 有权
    带边坡的拖车

    公开(公告)号：US20110215071A1

    公开(公告)日：2011-09-08

    申请号：US13037770

    申请日：2011-03-01

    申请人： Bojan Mitrovic ,  Joshua Mangum ,  William E. Quinn

    发明人： Bojan Mitrovic ,  Joshua Mangum ,  William E. Quinn

    IPC分类号： C23F1/00 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23F1/08 ,  B25B11/00

    CPC分类号： H01L21/68764 ,  C23C16/303 ,  C23C16/45563 ,  C23C16/45587 ,  C23C16/4584 ,  C23C16/4585 ,  H01L21/68735 ,  H01L21/68771

    摘要： A wafer carrier includes a body defining a central axis, a generally planar top surface perpendicular to the central axis, and pockets recessed below the top surface for receiving wafers. The body can include a lip projecting upwardly around the periphery of the top surface. The lip can define a lip surface sloping upwardly from the planar top surface in a radially outward direction away from the central axis. The body can be adapted for mounting on a spindle of a processing apparatus so that the central axis of the body is coaxial with the spindle. The lip can improve the pattern of gas flow over the top surface of the wafer carrier.

    摘要翻译： 晶片载体包括限定中心轴线的主体，垂直于中心轴线的大致平面的顶表面，以及凹陷在顶表面下方的用于接收晶片的凹槽。 身体可以包括围绕顶表面的周边向上突出的唇缘。 唇缘可以限定从平面顶表面向远离中心轴线的径向向外的方向向上倾斜的唇表面。 主体可适于安装在处理装置的主轴上，使得主体的中心轴线与主轴同轴。 唇缘可以改善在晶片载体的顶表面上的气流的图案。

    Wafer carrier with sloped edge
    10.
    发明授权
    Wafer carrier with sloped edge 有权
    具有倾斜边缘的晶圆载体

    公开(公告)号：US08888919B2

    公开(公告)日：2014-11-18

    申请号：US13037770

    申请日：2011-03-01

    申请人： Bojan Mitrovic ,  Joshua Mangum ,  William E. Quinn

    发明人： Bojan Mitrovic ,  Joshua Mangum ,  William E. Quinn

    IPC分类号： C23C16/455 ,  C23C16/458 ,  H01L21/673 ,  H01L21/687 ,  H01L21/20 ,  C23C16/30

    CPC分类号： H01L21/68764 ,  C23C16/303 ,  C23C16/45563 ,  C23C16/45587 ,  C23C16/4584 ,  C23C16/4585 ,  H01L21/68735 ,  H01L21/68771

    摘要： A wafer carrier includes a body defining a central axis, a generally planar top surface perpendicular to the central axis, and pockets recessed below the top surface for receiving wafers. The body can include a lip projecting upwardly around the periphery of the top surface. The lip can define a lip surface sloping upwardly from the planar top surface in a radially outward direction away from the central axis. The body can be adapted for mounting on a spindle of a processing apparatus so that the central axis of the body is coaxial with the spindle. The lip can improve the pattern of gas flow over the top surface of the wafer carrier.

    摘要翻译： 晶片载体包括限定中心轴线的主体，垂直于中心轴线的大致平面的顶表面，以及凹陷在顶表面下方的用于接收晶片的凹槽。 身体可以包括围绕顶表面的周边向上突出的唇缘。 唇缘可以限定从平面顶表面向远离中心轴线的径向向外的方向向上倾斜的唇表面。 主体可适于安装在处理装置的主轴上，使得主体的中心轴线与主轴同轴。 唇缘可以改善在晶片载体的顶表面上的气流的图案。