Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13463004Application Date: 2012-05-03
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Publication No.: US08815735B2Publication Date: 2014-08-26
- Inventor: Yi Jung Chen , Kuo Hui Su , Chiang Hung Lin
- Applicant: Yi Jung Chen , Kuo Hui Su , Chiang Hung Lin
- Applicant Address: TW Tao-Yuan Hsien
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Tao-Yuan Hsien
- Agency: Sinorica, LLC
- Agent Ming Chow
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A semiconductor device comprises a substrate, a dielectric layer, an undoped silicon layer, and a silicon material. The substrate comprises a doped region. The dielectric layer is formed on the substrate and comprises a contact hole, and the contact hole corresponds to the doped region. The undoped silicon layer is formed on the doped region. The silicon material fills the contact hole from the undoped silicon layer.
Public/Granted literature
- US20130292799A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-11-07
Information query
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