发明授权
- 专利标题： Plasma etching method
- 专利标题（中）： 等离子蚀刻法
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申请号： US12700571申请日： 2010-02-04
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公开(公告)号： US08821742B2公开(公告)日： 2014-09-02
- 发明人: Ryoichi Yoshida , Tetsuo Yoshida , Michishige Saito , Toshikatsu Wakaki , Hayato Aoyama , Akira Obi , Hiroshi Suzuki
- 申请人： Ryoichi Yoshida , Tetsuo Yoshida , Michishige Saito , Toshikatsu Wakaki , Hayato Aoyama , Akira Obi , Hiroshi Suzuki
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Rothwell, Figg, Ernst & Manbeck, P.C.
- 优先权： JP2004-224274 20040730; JP2004-349608 20041202
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; C03C15/00 ; H01J37/32 ; H01L21/311
摘要：
A plasma etching method by using a plasma etching apparatus having a depressurizable processing chamber; a lower electrode for mounting thereon a substrate to be processed in the processing chamber; an upper electrode facing the lower electrode in the processing chamber with a plasma generation region formed therebetween; a radio frequency power supply unit for applying a radio frequency power between the upper electrode and the lower electrode to thereby form a radio frequency electric field in the plasma generation region, the method comprising: supplying a first gas including etchant gas to an upper gas inlet to introduce the first gas through the upper electrode into the plasma generation region; and feeding a second gas including dilution gas to a side gas inlet to introduce the second gas through a sidewall of the processing chamber into the plasma generation region.
公开/授权文献
- US20100133234A1 PLASMA ETCHING APPARATUS 公开/授权日：2010-06-03
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