Invention Grant
- Patent Title: Substrate processing apparatus and substrate processing method
- Patent Title (中): 基板加工装置及基板处理方法
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Application No.: US13727671Application Date: 2012-12-27
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Publication No.: US08828183B2Publication Date: 2014-09-09
- Inventor: Hiromitsu Namba , Fitrianto , Yoichi Tokunaga , Yoshifumi Amano
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Abelman, Frayne & Schwab
- Priority: JP2011-289320 20111228; JP2012-243723 20121105
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/306 ; H01L21/3213 ; H01L21/02
Abstract:
A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.
Public/Granted literature
- US20130171831A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD Public/Granted day:2013-07-04
Information query
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