公开(公告)号：US11244820B2

公开(公告)日：2022-02-08

申请号：US16468383

申请日：2017-11-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoichi Tokunaga

IPC: H01L21/02 ,  B08B3/04 ,  B08B3/08 ,  H01L21/67 ,  H01L21/687 ,  H01L21/66

Abstract: There is provided a substrate processing apparatus including: a rotatable holding part configured to rotate a substrate while holding the substrate; a liquid supply part configured to supply a processing liquid to a peripheral edge portion of the substrate held by the rotatable holding part; a sensor configured to detect a temperature distribution at the peripheral edge portion; and a controller configured to execute an operation of detecting a boundary portion between a region of the peripheral edge portion to which the processing liquid adheres and a region of the peripheral edge portion to which the processing liquid does not adhere, based on the temperature distribution.

公开(公告)号：US10707102B2

公开(公告)日：2020-07-07

申请号：US15823691

申请日：2017-11-28

Applicant: Tokyo Electron Limited

Inventor： Hiromitsu Namba ,  Fitrianto ,  Yoichi Tokunaga ,  Yoshifumi Amano

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/683 ,  H01L21/3213 ,  H01L21/306

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

公开(公告)号：US11437252B2

公开(公告)日：2022-09-06

申请号：US16890332

申请日：2020-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiromitsu Namba ,  Fitrianto ,  Yoichi Tokunaga ,  Yoshifumi Amano

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/683

Abstract: A substrate processing apparatus includes a substrate holder that holds a substrate in a horizontal direction; a rotation driver that rotates the substrate holder; a first processing liquid nozzle that supplies a first processing liquid to a peripheral portion of the substrate; a first gas supply source that supplies a first gas at a first temperature to the peripheral portion of the substrate; and a second gas supply source that supplies a second gas at a second temperature to an inner side of the substrate in a radial direction. The first gas supply source includes a heater that heats the first gas into the first temperature, and a first gas ejection port that supplies the first gas heated by the heater through a conduit, and the second gas supply source includes a second gas ejection port that supplies the second gas through a gas supply pipe.

公开(公告)号：US09716002B2

公开(公告)日：2017-07-25

申请号：US15204068

申请日：2016-07-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasushi Takiguchi ,  Taro Yamamoto ,  Akihiro Fujimoto ,  Shuuichi Nishikido ,  Dai Kumagai ,  Naoto Yoshitaka ,  Takahiro Kitano ,  Yoichi Tokunaga

IPC: H01L21/02 ,  B08B3/02 ,  H01L21/67 ,  B08B1/00 ,  B08B1/04 ,  B08B5/02 ,  B08B7/00 ,  H01L21/687

CPC classification number: H01L21/0209 ,  B08B1/002 ,  B08B1/04 ,  B08B3/02 ,  B08B5/02 ,  B08B7/0057 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/68742 ,  H01L21/68764

Abstract: A disclosed substrate cleaning apparatus for cleaning a back surface of a substrate includes a first substrate supporting portion configured to support the substrate at a first area of a back surface of the substrate, the back surface facing down; a second substrate supporting portion configured to support the substrate at a second area of the back surface of the substrate, the second area being separated from the first area; a cleaning liquid supplying portion configured to supply cleaning liquid to the back surface of the substrate; a drying portion configured to dry the second area of the back surface of the substrate; and a cleaning portion configured to clean a third area of the back surface of the substrate when the substrate is supported by the first substrate supporting portion, the third area including the second area, and a fourth area of the back surface of the substrate when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area of the back surface.

公开(公告)号：US20140251539A1

公开(公告)日：2014-09-11

申请号：US14198922

申请日：2014-03-06

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi Mizuno ,  Yoichi Tokunaga ,  Hiromitsu Namba ,  Tatuhiro Ueki ,  Jun Nogami ,  Jiro Higashijima ,  Yoshifumi Amano ,  Takatoshi Miyama

IPC: H01L21/67

CPC classification number: H01L21/67051

Abstract: Disclosed are a substrate processing apparatus and a substrate processing method configured to perform a processing of a substrate by a processing liquid, in which the processing liquid is supplied to a substrate which rotates to process the substrate. The substrate processing apparatus includes a substrate rotating unit that rotates the substrate, a processing liquid supply unit that supplies the processing liquid to the substrate, a collection cup disposed around the substrate to collect the processing liquid supplied to the substrate, and form an air stream that flows downward from an opening formed at a top of the collection cup through a periphery of an outside of the substrate, and a negative pressure generating unit which is provided at an inside of the collection cup and at an outside of the opening and generates a negative pressure which acts toward the outside of the substrate.

Abstract translation: 公开了一种基板处理装置和基板处理方法，其被配置为通过处理液体进行基板的处理，其中处理液体被供给到旋转以处理基板的基板。 基板处理装置包括使基板旋转的基板旋转单元，将处理液供给到基板的处理液供给单元，设置在基板周围的收集杯，收集供给到基板的处理液，形成空气流 从形成在收集杯顶部的开口向下流过基板外部的周边;以及负压产生单元，其设置在收集杯的内部并在开口的外侧，并产生 作用于衬底外部的负压。

公开(公告)号：US20150323250A1

公开(公告)日：2015-11-12

申请号：US14707145

申请日：2015-05-08

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi Mizuno ,  Yoichi Tokunaga ,  Hiromitsu Nanba ,  Tatuhiro Ueki ,  Fitrianto

IPC: F26B3/20 ,  H01L21/67

CPC classification number: H01L21/67109 ,  F26B3/20 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67075

Abstract: A particle can be suppressed from being generated by removing a processing liquid or crystals caused by the processing liquid which adhere to a cover member. A substrate processing apparatus includes a substrate holding unit 3 configured to hold a substrate W; a processing liquid supply unit 7 configured to supply a processing liquid onto the substrate W held in the substrate holding unit 3; and a cover member 5 which has a ring shape and is disposed to face a peripheral portion of the substrate held in the substrate holding unit 3. Further, the cover member 5 is equipped with a heater 701 configured to heat the cover member 5.

Abstract translation: 可以通过除去由附着在盖构件上的处理液引起的处理液或晶体来抑制颗粒的产生。 基板处理装置包括：基板保持单元3，被配置为保持基板W; 处理液供给单元7，被配置为将处理液体供给到保持在基板保持单元3中的基板W上; 以及具有环状并被设置为面对保持在基板保持单元3中的基板的周边部分的盖构件5.此外，盖构件5配备有构造成加热盖构件5的加热器701。

公开(公告)号：US20140374022A1

公开(公告)日：2014-12-25

申请号：US14447029

申请日：2014-07-30

Applicant: Tokyo Electron Limited

Inventor： Hiromitsu Namba ,  Yoichi Tokunaga ,  Fitrianto ,  Yoshifumi Amano

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/6708 ,  H01L21/02087 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67109 ,  H01L21/6838

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

Abstract translation: 基板处理装置包括：基板保持单元，被配置为保持基板; 第一处理液喷嘴，被配置为将第一处理液体供应到所述基板的周边部分; 第二处理液喷嘴，被配置为将温度低于第一处理液的第二处理液供给到基板的周边部分; 第一气体供给口，其构造成将第一温度的第一气体供给到所述基板的周边部的第一供气位置; 以及第二气体供给口，被配置为相对于与所述基板相对于所述第一气体供给位置，在比所述第一温度低的第二温度向所述径向中心附近供给第二气体。

公开(公告)号：US11574827B2

公开(公告)日：2023-02-07

申请号：US16641713

申请日：2018-08-17

Applicant: Tokyo Electron Limited

Inventor： Tadashi Iino ,  Yoshihiro Kai ,  Yoichi Tokunaga ,  Nobuhiro Ogata ,  Jiro Higashijima

IPC: H01L21/67 ,  H01L21/304 ,  H01L21/306 ,  H01L21/687

Abstract: A substrate processing apparatus includes: a processing unit including a holder that holds a substrate and rotates the substrate, a nozzle that ejects a processing liquid, and a conductive piping unit that supplies the processing liquid to the nozzle; a controller that causes the processing unit to execute a liquid processing in which the substrate is processed by supplying the processing liquid from the nozzle to the substrate that is held and rotated by the holder, and a measuring unit that measures a flowing current generated by the processing liquid flowing through the piping unit. The controller monitors the liquid processing based on a measurement result by the measuring unit.

公开(公告)号：US20180108544A1

公开(公告)日：2018-04-19

申请号：US15823691

申请日：2017-11-28

Applicant: Tokyo Electron Limited

Inventor： Hiromitsu Namba ,  Fitrianto ,  Yoichi Tokunaga ,  Yoshifumi Amano

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/683 ,  H01L21/3213 ,  H01L21/306

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

公开(公告)号：US09859136B2

公开(公告)日：2018-01-02

申请号：US14447029

申请日：2014-07-30

Applicant: Tokyo Electron Limited

Inventor： Hiromitsu Namba ,  . Fitrianto ,  Yoichi Tokunaga ,  Yoshifumi Amano

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3213

CPC classification number: H01L21/6708 ,  H01L21/02087 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67109 ,  H01L21/6838

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.