发明授权
- 专利标题： Plasma enhanced cyclic chemical vapor deposition of silicon-containing films
- 专利标题（中）： 含硅膜的等离子体增强循环化学气相沉积
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申请号： US13405453申请日： 2012-02-27
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公开(公告)号： US08828505B2公开(公告)日： 2014-09-09
- 发明人: Hareesh Thridandam , Manchao Xiao , Xinjian Lei , Thomas Richard Gaffney , Eugene Joseph Karwacki, Jr.
- 申请人： Hareesh Thridandam , Manchao Xiao , Xinjian Lei , Thomas Richard Gaffney , Eugene Joseph Karwacki, Jr.
- 申请人地址： US PA Allentown
- 专利权人： Air Products and Chemicals, Inc.
- 当前专利权人： Air Products and Chemicals, Inc.
- 当前专利权人地址： US PA Allentown
- 代理商 Rosaleen P. Morris-Oskanian; Lina Yang
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; H01L21/31
摘要：
The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H3, preferably of the formula (R1R2N)SiH3 wherein R1 and R2 are selected independently from C2 to C10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.