公开(公告)号：US08828505B2

公开(公告)日：2014-09-09

申请号：US13405453

申请日：2012-02-27

申请人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney ,  Eugene Joseph Karwacki, Jr.

发明人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney ,  Eugene Joseph Karwacki, Jr.

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3185

摘要： The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H3, preferably of the formula (R1R2N)SiH3 wherein R1 and R2 are selected independently from C2 to C10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.

摘要翻译： 本发明是由具有Si-H3（优选为式（R1R2N）SiH3）的烷基氨基硅烷，氮化硅，碳氮化硅，氮氧化硅，氮氧化硅，碳掺杂的氧化硅等离子体增强的循环化学气相沉积的方法，其中R1和R2 独立于C2至C10选择氮和氧源，优选为氨或氧，以提供与热化学气相沉积的膜相比具有改进性能的蚀刻速率，氢浓度和应力的膜。

公开(公告)号：US20120171874A1

公开(公告)日：2012-07-05

申请号：US13405453

申请日：2012-02-27

申请人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney ,  Eugene Joseph Karwacki, JR.

发明人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney ,  Eugene Joseph Karwacki, JR.

IPC分类号： H01L21/314

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3185

摘要： The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H3, preferably of the formula (R1R2N)SiH3 wherein R1 and R2 are selected independently from C2 to C10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.

摘要翻译： 本发明是由具有Si-H3（优选为式（R1R2N）SiH3）的烷基氨基硅烷，氮化硅，碳氮化硅，氮氧化硅，氮氧化硅，碳掺杂的氧化硅等离子体增强的循环化学气相沉积的方法，其中R1和R2 独立于C2至C10选择氮和氧源，优选为氨或氧，以提供与热化学气相沉积的膜相比具有改进性能的蚀刻速率，氢浓度和应力的膜。

公开(公告)号：US20080145535A1

公开(公告)日：2008-06-19

申请号：US11949868

申请日：2007-12-04

申请人： Xinjian Lei ,  Hareesh Thridandam ,  Manchao Xiao ,  Heather Regina Bowen ,  Thomas Richard Gaffney

发明人： Xinjian Lei ,  Hareesh Thridandam ,  Manchao Xiao ,  Heather Regina Bowen ,  Thomas Richard Gaffney

IPC分类号： C23C16/06

CPC分类号： C23C16/34 ,  C23C16/45553

摘要： A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02(R0═SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.

摘要翻译： 一种在衬底上沉积金属氮化硅的方法，包括：在加热的衬底上吸附金属酰胺，清除未吸附的金属酰胺，与含有一个或多个Si-H 3 N 3片段的含硅源接触 加热的底物与吸附的金属酰胺反应，其中含硅源具有一个或多个H 3 Si-NR O 2 O 2， （R 0〜S 3 H 3，R 1，R 1或R 2）定义如下）选自 由下式中的一个或多个组成：其中式中的R和R 1表示通常具有2至约10个碳原子的脂族基团，例如支链烷基，具有R和R 1的环烷基 式A中也可以组合成环状基团，R 2表示单键，（CH 2 CH 2）n， 环或SiH 2 H 2，并且清除未反应的含硅源。

公开(公告)号：US20070275166A1

公开(公告)日：2007-11-29

申请号：US11439554

申请日：2006-05-23

申请人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney

发明人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney

IPC分类号： C23C16/00

CPC分类号： H01L21/31608 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/3145 ,  H01L21/31633

摘要： The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas: The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.

摘要翻译： 本发明涉及通过CVD在衬底上沉积氧化硅层的方法。 在氧化剂存在下，烷基具有至少两个碳原子的有机氨基硅烷前体的反应允许形成氧化硅膜。 有机基氨基硅烷由下式表示：使用二异丙基氨基硅烷是形成氧化硅膜的优选前体。

公开(公告)号：US07678422B2

公开(公告)日：2010-03-16

申请号：US11949868

申请日：2007-12-04

申请人： Xinjian Lei ,  Hareesh Thridandam ,  Manchao Xiao ,  Heather Regina Bowen ,  Thomas Richard Gaffney

发明人： Xinjian Lei ,  Hareesh Thridandam ,  Manchao Xiao ,  Heather Regina Bowen ,  Thomas Richard Gaffney

IPC分类号： C23C16/18 ,  C23C16/30

CPC分类号： C23C16/34 ,  C23C16/45553

摘要： A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02 (R0═SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.

摘要翻译： 一种在衬底上沉积金属氮化硅的方法，包括：在加热的衬底上吸附金属酰胺，清除未吸附的金属酰胺，将具有一个或多个Si-H 3片段的含硅源与被加热的衬底接触，与 吸附的金属酰胺，其中所述含硅源具有一个或多个选自下列中的一个或多个的一个或多个的R 3 Si-NRO 2（R 0 = SiH 3，R 1，R 2或R 2，定义如下）：其中式中的R和R 1 代表通常具有2至约10个碳原子的脂族基团，例如支链烷基，具有式R中R和R 1的环烷基也可结合成环状基团，并且R 2表示单键，（CH 2）n，环或 SiH2，并且清除未反应的含硅源。

公开(公告)号：US20080207007A1

公开(公告)日：2008-08-28

申请号：US12030186

申请日：2008-02-12

申请人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney ,  Eugene Joseph Karwacki

发明人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney ,  Eugene Joseph Karwacki

IPC分类号： H01L21/31

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3185

摘要： The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H3, preferably of the formula (R1R2N)SiH3 wherein R1 and R2 are selected independently from C2 to C10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stess as compared to films from thermal chemical vapor deposition.

摘要翻译： 本发明是由具有Si-H 3 3烷基氨基硅烷的氮化硅，碳氮化硅，氮氧化硅，氮氧化硅和碳掺杂的氧化硅等离子体增强的循环化学气相沉积的方法，优选式 （R 1，R 2，N 2）其中R 1和R 2各自独立地选自氢， 独立于C 2至C 10，并且已经开发了氮或氧源，优选氨或氧，以提供具有改进性质的膜，例如蚀刻速率，氢浓度 ，与热化学气相沉积的薄膜相比。

公开(公告)号：US07875312B2

公开(公告)日：2011-01-25

申请号：US11439554

申请日：2006-05-23

申请人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney

发明人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney

IPC分类号： C23C16/00

CPC分类号： H01L21/31608 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/3145 ,  H01L21/31633

摘要： The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas: The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.

摘要翻译： 本发明涉及通过CVD在衬底上沉积氧化硅层的方法。 在氧化剂存在下，烷基具有至少两个碳原子的有机氨基硅烷前体的反应允许形成氧化硅膜。 有机基氨基硅烷由下式表示：使用二异丙基氨基硅烷是形成氧化硅膜的优选前体。

公开(公告)号：US09447287B2

公开(公告)日：2016-09-20

申请号：US14122825

申请日：2012-06-01

申请人： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki, Jr. ,  Bing Han ,  Mark Leonard O'Neill

发明人： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki, Jr. ,  Bing Han ,  Mark Leonard O'Neill

IPC分类号： C23C16/34 ,  C09D5/00 ,  C07F7/08 ,  C23C16/30 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/02211 ,  C07F7/0896 ,  C07F7/10 ,  C09D5/00 ,  C09D7/63 ,  C23C16/30 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0228

摘要： Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3−x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3−x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

摘要翻译： 本文描述了用于沉积含碳掺杂硅的膜的组合物，其中组合物包含第一前体，其包含至少一种选自下组的化合物：具有式R 5 Si（NR 3 R 4）x H 3-x的有机氨基烷基硅烷，其中x = 1， 2，3; 具有式R6Si（OR7）xH3-x的有机烷氧基烷基硅烷，其中x = 1,2,3; 具有式R 8 N（SiR 9（NR 10 R 11）H）2的有机氨基硅烷; 具有式R8N（SiR9LH）2的有机氨基硅烷及其组合; 和任选地包含具有下式的化合物的第二前体：Si（NR1R2）H3。 本文还描述了使用该组合物沉积碳掺杂含硅膜的方法，其中所述方法选自以下：循环化学气相沉积（CCVD），原子层沉积（ALD），等离子体增强ALD（PEALD）和 等离子增强CCVD（PECCVD）。

公开(公告)号：US08906455B2

公开(公告)日：2014-12-09

申请号：US13624190

申请日：2012-09-21

申请人： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, Jr. ,  Hansong Cheng

发明人： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, Jr. ,  Hansong Cheng

IPC分类号： C23C16/00 ,  H01L21/02 ,  H01L21/316 ,  H01L21/318 ,  C23C16/34 ,  H01L21/314 ,  C23C16/40 ,  C23C16/455 ,  C23C16/30

CPC分类号： H01L21/02271 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/3185

摘要： This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

摘要翻译： 本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。 用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。 该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

公开(公告)号：US20140287164A1

公开(公告)日：2014-09-25

申请号：US14122825

申请日：2012-06-01

申请人： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki, JR. ,  Bing Han ,  Mark Leonard O'Neill

发明人： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki, JR. ,  Bing Han ,  Mark Leonard O'Neill

IPC分类号： C09D5/00 ,  C23C16/34 ,  C23C16/40

CPC分类号： H01L21/02211 ,  C07F7/0896 ,  C07F7/10 ,  C09D5/00 ,  C09D7/63 ,  C23C16/30 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0228

摘要： Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

摘要翻译： 本文描述了用于沉积含碳掺杂硅的膜的组合物，其中组合物包含第一前体，其包含至少一种选自下组的化合物：具有式R 5 Si（NR 3 R 4）x H 3-x的有机氨基烷基硅烷，其中x = 1， 2，3; 具有式R6Si（OR7）xH3-x的有机烷氧基烷基硅烷，其中x = 1,2,3; 具有式R 8 N（SiR 9（NR 10 R 11）H）2的有机氨基硅烷; 具有式R8N（SiR9LH）2的有机氨基硅烷及其组合; 和任选地包含具有下式的化合物的第二前体：Si（NR1R2）H3。 本文还描述了使用该组合物沉积碳掺杂含硅膜的方法，其中所述方法选自以下：循环化学气相沉积（CCVD），原子层沉积（ALD），等离子体增强ALD（PEALD）和 等离子增强CCVD（PECCVD）。