发明授权
- 专利标题： Method for forming a deep trench in a microelectronic component substrate
- 专利标题（中）： 在微电子元件衬底中形成深沟槽的方法
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申请号： US13713135申请日： 2012-12-13
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公开(公告)号： US08828882B2公开(公告)日： 2014-09-09
- 发明人: Arnaud Tournier , Françcois Leverd
- 申请人： STMicroelectronics (Crolles 2) SAS
- 申请人地址： FR Crolles
- 专利权人： STMicroelectronics (Crolles 2) SAS
- 当前专利权人： STMicroelectronics (Crolles 2) SAS
- 当前专利权人地址： FR Crolles
- 代理机构： Gardere Wynne Sewell LLP
- 优先权： FR1162070 20111220
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461 ; H01L29/06 ; H01L21/762 ; H01L21/3065
摘要：
A trench is formed in a semiconductor substrate by depositing an etch mask on the substrate having an opening, etching of the trench through the opening, and doping the walls of the trench. The etching step includes a first phase having an etch power set to etch the substrate under the etch mask, and a second phase having an etch power set smaller than the power of the first phase. Further, the doping of the walls of the trench is applied through the opening of the etch mask.
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